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Surface Passivation of Cu by Annealing Cu/Al Multilayer Films
Published online by Cambridge University Press: 15 February 2011
Abstract
Surface passivation of Cu by annealing Cu/Al multilayer films (Cu/Al/Cu/Al/Cu) on SiO2 has been demonstrated. Cu/Al multilayer films were annealed from 300°C to 500°C. The buried Al is transported to the Cu surface during annealing, forming A12O3 at the exposed surface. The Cu in annealed Cu/Al multilayer films shows no oxidation when heated in air at 300°C for 24 hrs. The electrical resistivity of these films is 2.3 μΩ cm.
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- Copyright © Materials Research Society 1995
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