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Surface Passivation of Cu by Annealing Cu/Al Multilayer Films

Published online by Cambridge University Press:  15 February 2011

W. Wang ,
W.A. Lanford  and
S.P. Murarka
W. Wang
Affiliation:
Department of Physics, SUNY at Albany, Albany, NY 12222
W.A. Lanford
Affiliation:
Department of Physics, SUNY at Albany, Albany, NY 12222
S.P. Murarka
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnique Institute, Troy, NY 12018
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Abstract

Surface passivation of Cu by annealing Cu/Al multilayer films (Cu/Al/Cu/Al/Cu) on SiO2 has been demonstrated. Cu/Al multilayer films were annealed from 300°C to 500°C. The buried Al is transported to the Cu surface during annealing, forming A12O3 at the exposed surface. The Cu in annealed Cu/Al multilayer films shows no oxidation when heated in air at 300°C for 24 hrs. The electrical resistivity of these films is 2.3 μΩ cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 321
Copyright
Copyright © Materials Research Society 1995

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References

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