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Surface Modification of ZnxCd1-x Te Due to Low Energy Ion Sputtering

Published online by Cambridge University Press:  15 February 2011

S. Vijayalakshmi ,
K.-T. Chen ,
M. A. George ,
A. Burger  and
W. E. Collins
S. Vijayalakshmi
Affiliation:
Center For Photonic Materials And Devices, Department of Physics, Fisk University, Nashville, TN-37208, U.S.A.
K.-T. Chen
Affiliation:
Center For Photonic Materials And Devices, Department of Physics, Fisk University, Nashville, TN-37208, U.S.A.
M. A. George
Affiliation:
Center For Photonic Materials And Devices, Department of Physics, Fisk University, Nashville, TN-37208, U.S.A.
A. Burger
Affiliation:
Center For Photonic Materials And Devices, Department of Physics, Fisk University, Nashville, TN-37208, U.S.A.
W. E. Collins
Affiliation:
Center For Photonic Materials And Devices, Department of Physics, Fisk University, Nashville, TN-37208, U.S.A.
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Abstract

ZnxCd1-xTe is a widely used substrate for the epitaxial growth of HgCdTe, which is used in infrared detectors. Results of the effect of sputtering of ZnxCd1-xTe single crystals with low energy Ar beam are reported in this paper. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) techniques were used to measure the concentration of Zn in these crystals. Selective sputtering of Zn atoms has been observed from freshly cleaved crystals using XPS studies. Sputtering is a common method of cleaning ZnxCd1-xTe crystals in their device preparation and our studies show that this method of cleaning alters the surface which may introduce lattice mismatch on the surface. Surface morphology before and after cleaving the crystals is studied using Atomic Force Microscopy (AFM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 327
Copyright
Copyright © Materials Research Society 1995

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References

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