Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-20T00:00:30.970Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Characterisation of Si After HF Treatments and its Influence on the Dielectric Breakdown of Thermal Oxides

Published online by Cambridge University Press:  25 February 2011

S. Verhaverbeke ,
J. Alay ,
P. Mertens ,
M. Meuris ,
M. Heyns ,
W. Vandervorst ,
M. Murrell  and
C. Sofield
S. Verhaverbeke
Affiliation:
IMIEC, Kapeldreef 75, B-3001 Leuven, Belgium
J. Alay
Affiliation:
IMIEC, Kapeldreef 75, B-3001 Leuven, Belgium LCMM, Universitat de Barcelona, Av. Diagonal 645, 08028 Barcelona
P. Mertens
Affiliation:
IMIEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Meuris
Affiliation:
IMIEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Heyns
Affiliation:
IMIEC, Kapeldreef 75, B-3001 Leuven, Belgium
W. Vandervorst
Affiliation:
IMIEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Murrell
Affiliation:
UKAEA, Harwell Laboratory B477, Oxfordshire, OX11ORA, UK
C. Sofield
Affiliation:
UKAEA, Harwell Laboratory B477, Oxfordshire, OX11ORA, UK
Get access

Abstract

The characteristics of the HF-treated Si-surface are investigated as a function of dipping time in dilute HF solutions. It is found that the contact angle is a very sensitive measure for the degree of oxidation of the Si-surface. The importance of obtaining a perfectly passivated surface in order to reduce the particle deposition on the surface is shown. HF-last cleans are found to be beneficial in terms of metallic contamination and gate oxide integrity. The importance of the loading ambient in furnaces is investigated after HF-treatments and RCA-cleans.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 391
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kern, W. and Puotinen, D., RCA Review 31, pp. 187–205, June 1970 Google Scholar
2. Ishizaki, A. and Shiraki, Y., J. Electrochemical Soc., 133, 666 (1986)Google Scholar
3. Grunthaner, P.J. et al., Thin Solid Films, 183, 197 (1990)CrossRefGoogle Scholar
4. Meyerson, B.S., Himpsel, F.J., Uram, K.J., Appl. Phys. Lett., 57, 1034 (1990)Google Scholar
5. Pidduck, A.J., Jackson, R., Robbins, D.J., Leong, W.Y. and Wheeler, M., Proc. 2nd Int. Symp. on Cleaning Technology, ECS Fall Meeting (Phoenix, Arizona 1991), in pressGoogle Scholar
6. Menon, V.B., Donovan, R.P., Proc. 1st Int. Symposium on Cleaning Technology, ECS 1989, pp. 167–181, Vol 90–9 Google Scholar
7. Meuris, M., Heyns, M., Küper, W., Verhaverbeke, S. and Philipossian, A., Proceedings of the Electrochem. Soc. Spring Meeting, Washington D.C., 5-10 May 1991, in pressGoogle Scholar
8. Eichinger, P., Proceedings Symp. Anal. Techn. Semic. Mat. and Process Charact., ECS meeting, ESSDERC 89 Berlin, Vol 90–11, p.227 Google Scholar
9. Hirose, M., Yasaka, T., Takakura, M., Miyazaki, S., Sol. State Techn. Dec. 1991, pp. 43–48 Google Scholar
10. Verhaverbeke, S., Meuris, M., Mertens, P., Heyns, M., Philipossian, A., Griif, D. and Schnegg, A., IEEE IEDM Tech. Dig., pp. 71–74 (1991)Google Scholar
11. Kern, F.W. Jr, Itano, M., Kawanabe, I., Miyashita, M., Rosenberg, R. and Ohmi, T., Proc. of May 1991 IES symposiumGoogle Scholar
12. Küper, W. and Maex, K., Proc. Techn. Conf. on defect control and rel. yield manag., Semicon/Europa 1991, Zürich 1991 Google Scholar
13. Ohmi, T., presented at the IMEC Summer School 1989.Google Scholar
14. Ohmi, T., Miyashita, M., Imaoka, T., Proc. of Microcontamination 91, p.491 (1991)Google Scholar
15. Verhaverbeke, S., Meuris, M., Mertens, P., Heyns, M., Keersmaecker, R. De, Murrell, M. and Sofield, C., Proc. 2nd Int. Symp. on Cleaning Technology, ECS Fall Meeting (Phoenix, Arizona 1991), in pressGoogle Scholar
16. Shimono, T. and Tsuji, M., Proceedings of 1st Workshop on ULSI Ultra Clean Technology, pp. 49–72, Tokyo 1989 Google Scholar
17. Imaoka, T., Kezuka, T., Takano, J., Sugiyama, I. and Ohmi, T., Proceedings of IES conference, Nashville, May 1992, in pressGoogle Scholar
18. Murrell, M., Sofield, C., Sugden, S., Verhaverbeke, S., Heyns, M., Welland, M. and Golen, B., Esprit Basic Research Workshop 3109 PROMPT, Oxford 1991, in pressGoogle Scholar