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Substrate Doping and Orientation Effects on Dielectric Growth on Siucon in a Nitrous Oxide Environment

Published online by Cambridge University Press:  21 February 2011

H.B. Harrison ,
S. Dimitrijev ,
D. Sweatman ,
A. Misiura  and
G.K. Reeves
H.B. Harrison
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Brisbane, Queensland, Australia4111.
S. Dimitrijev
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Brisbane, Queensland, Australia4111.
D. Sweatman
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Brisbane, Queensland, Australia4111.
A. Misiura
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Brisbane, Queensland, Australia4111.
G.K. Reeves
Affiliation:
MMTC, Royal Melbourne Institute of Technology, Melbourne, Australia, 3000.
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Abstract

In this paper both the substrate doping concentration and single crystal silicon orientation are considered when dielectrics are grown on silicon in a nitrous oxide environment. Our initial preliminary findings show that for heavily doped subtrates thicker layers of dielectric result compared to their lower doped counterparts. Furthermore we find a crossover point of temperature for growth rate for <111> compared to <100>. We believe that the different growth rates are attributable to nitrogen build up at the dielectric interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 417
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Hwang, H., Ting, W., Maiti, B., Kwong, D.L. and Lee, J., Appl. Phys. Lett. 57, 1010 (1990).Google Scholar
2. Fukuda, M., Arakawa, T. and Ohno, S., Electron Lett. 26, 1505 (1990).Google Scholar
3. Chu, T., Ting, W., Ahn, J. and Kwong, D.L., J. Electrochem Soc. 138, L13. (1991).Google Scholar
4. Yoon, G.W., Joshi, A.B., Ain, J. and Kwong, D.L., J. Appl. Phys. 72(12), 5706 (1992).Google Scholar
5. Naiman, M.L., Kirk, C.T., Emerson, B.L., Taitel, J.B. and Senturia, S.D., J. Appl. Phys. 58(2), 779 (1985).Google Scholar
6. Harrison, H.B., Dimitrijev, S., Sweatman, D., Parker, J. and Preston, S.. Paper G.024 This Conference.Google Scholar
7. Irene, E.A., Massould, H.Z. and Tierney, E., Extended Abstract, J. Electrochem, Soc. Spring Meeting, Atlanta G.A. p383 (1988).Google Scholar
8. Dimitrijev, S., Sweatman, D. and Harrison, H.B., Appl. Phys Letters, Vol.62, No.13, 1, 1993.Google Scholar