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Substrate Doping and Orientation Effects on Dielectric Growth on Siucon in a Nitrous Oxide Environment

Published online by Cambridge University Press:  21 February 2011

H.B. Harrison ,
S. Dimitrijev ,
D. Sweatman ,
A. Misiura  and
G.K. Reeves
H.B. Harrison
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Brisbane, Queensland, Australia4111.
S. Dimitrijev
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Brisbane, Queensland, Australia4111.
D. Sweatman
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Brisbane, Queensland, Australia4111.
A. Misiura
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Brisbane, Queensland, Australia4111.
G.K. Reeves
Affiliation:
MMTC, Royal Melbourne Institute of Technology, Melbourne, Australia, 3000.
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Abstract

In this paper both the substrate doping concentration and single crystal silicon orientation are considered when dielectrics are grown on silicon in a nitrous oxide environment. Our initial preliminary findings show that for heavily doped subtrates thicker layers of dielectric result compared to their lower doped counterparts. Furthermore we find a crossover point of temperature for growth rate for <111> compared to <100>. We believe that the different growth rates are attributable to nitrogen build up at the dielectric interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 417
Copyright
Copyright © Materials Research Society 1993

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References

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