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Submicron P-Channel Mos Devices with Boron Doped Polysilicon Gates Fabricated by Rapid Thermal Processing

Published online by Cambridge University Press:  21 February 2011

Sheldon M. Kugelmass  and
J. Peter Krusius
Sheldon M. Kugelmass
Affiliation:
Cornell University, School of Electrical Engineering and National Nanofabrication Facility, Ithaca, NY 14853
J. Peter Krusius
Affiliation:
Cornell University, School of Electrical Engineering and National Nanofabrication Facility, Ithaca, NY 14853
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Abstract

A low thermal budget process is demonstrated for the fabrication of submicron Boron doped polysilicon gate p-channel MOS devices with ultra thin gate insulators. All critical processing steps with temperatures above 700 °C, including gate oxide growth and shallow source/drain junction formation, were performed by Rapid Thermal Processing (RTP). In situ doped polysilicon was used to eliminate the need for a high temperature drive-in step. Surface channel p-channel enhancement mode devices with excellent characteristics were fabricated to demonstrate the feasibility of this process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 293
Copyright
Copyright © Materials Research Society 1990

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References

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