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Study on C60 Doped PMMA for Organic Memory Devices

Published online by Cambridge University Press:  01 February 2011

Micael Charbonneau
Affiliation:
Raluca Tiron
Affiliation:
[email protected], CEA, LETI, MINATEC, Nanotec Division, Grenoble, France
Julien Buckley
Affiliation:
[email protected], CEA, LETI, MINATEC, Nanotec Division, Grenoble, France
Mathieu Py
Affiliation:
[email protected], CEA, LETI, MINATEC, Nanotec Division, Grenoble, France
Jean-paul Barnes
Affiliation:
[email protected], CEA, LETI, MINATEC, Nanotec Division, Grenoble, France
Samir Derrough
Affiliation:
[email protected], CEA, LETI, MINATEC, Nanotec Division, Grenoble, France
Christophe Constancias
Affiliation:
[email protected], CEA, LETI, MINATEC, Nanotec Division, Grenoble, France
Christophe Licitra
Affiliation:
[email protected], CEA, LETI, MINATEC, Nanotec Division, Grenoble, France
Claire Sourd
Affiliation:
[email protected], CEA, LETI, MINATEC, Nanotec Division, Grenoble, France
Gerard Ghibaudo
Affiliation:
[email protected], IMEP-LAHC, Grenoble, France
Barbara De Salvo
Affiliation:
[email protected], CEA, LETI, MINATEC, Nanotec Division, Grenoble, France
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Abstract

In this paper, fabrication of nanocomposite thin films with introduction of fullerene (C60) molecules in PolyMethyl MethAcrylate resist (PMMA) was investigated from a material and electrical point of view. The effective inclusion of C60 molecules in the samples was characterized by using UV-vis and Tof-SIMS instruments. The modified resist PMMA:C60 was also studied with Thermal analysis (TGA, DSC) where modification of physical properties is reported. Films were included in MIS and MIM devices and results on non volatile trapping of C60 doped PMMA are presented. Moreover, e-beam exposure tests showed that PMMA:C60 active layers for memory devices, were scalable in size.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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