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Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates.

Published online by Cambridge University Press:  11 February 2011

N. A. Suvorova ,
A. H. Mueller ,
A. A. Suvorova ,
M. Saunders  and
E. A. Irene
N. A. Suvorova
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, NC 27599, U.S.A.
A. H. Mueller
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, NC 27599, U.S.A.
A. A. Suvorova
Affiliation:
Centre for Microscopy and Microanalysis, University of Western Australia, Crawley 6009, WA, Australia
M. Saunders
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, NC 27599, U.S.A.
E. A. Irene
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, NC 27599, U.S.A.
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Abstract

(Ba,Sr)TiO3 (BST) thin films were deposited by ion beam sputtering on both bare and oxidized Si. Spectroscopic ellipsometry (SE) model results have shown an increase in the SiO2 layer thickness for bare substrates and those with a 1 nm initial oxide layer, and a decrease for thicker (3.5 nm) initial SiO2 films. This result was confirmed by high resolution electron microscopy (HREM) analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. From high-frequency capacitance-voltage (C-V) analysis, a decrease in the interface trap density Dit of an order of magnitude was observed for oxidized Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N9.12/T7.12
Copyright
Copyright © Materials Research Society 2003

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References

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