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Structural Characterization of P-I-N Diode Superlattice Structures Grown on <100>, <110>, and <111> Orientation Si Substrates

Published online by Cambridge University Press:  22 February 2011

P. M. Adams ,
R. C. Bowman Jr ,
V. Arbet-Engols ,
K. L. Wang  and
C. C. Ahn
P. M. Adams
Affiliation:
The Aerospace Corp., P. O. Box 92 957, Los Angeles, CA 90009
R. C. Bowman Jr
Affiliation:
The Aerospace Corp., P. O. Box 92 957, Los Angeles, CA 90009
V. Arbet-Engols
Affiliation:
University of California, Los Angeles, CA 90024
K. L. Wang
Affiliation:
University of California, Los Angeles, CA 90024
C. C. Ahn
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

P-I-N diodes whose intrinsic region consists of strained layer superlattices (SLS), separated by 40 nm Si spacers, have been grown by MBE on Si substrates with <100>, <110>, and <111> orientations. These structures have been characterized by x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). The dual periodicities in these structures produced unique XRD effects and the quality was highly dependent on substrate orientation. The <100> sample was in general free of defects, whereas the <110> and <111> specimens contained significant numbers of twins and dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 147
Copyright
Copyright © Materials Research Society 1991

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References

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