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Strained Silicon On Insulator wafers made by the Smart Cut™ technology

Published online by Cambridge University Press:  17 March 2011

B. Ghyselen ,
Y. Bogumilowicz ,
C. Aulnette ,
A. Abbadie ,
B. Osternaud ,
P. Besson ,
N. Daval ,
F. Andrieu ,
I. Cayrefourq  and
H. Moriceau
...Show all authors
B. Ghyselen
Affiliation:
SOITEC - Parc technologique des Fontaines - 38190 Bernin, France
Y. Bogumilowicz
Affiliation:
CEA / LETI - 17, avenue des Martyrs 38054 Grenoble Cedex 9, France STMicroelectonics - 850, rue Jean Monnet, 38926, Crolles Cedex, France
C. Aulnette
Affiliation:
SOITEC - Parc technologique des Fontaines - 38190 Bernin, France
A. Abbadie
Affiliation:
CEA / LETI - 17, avenue des Martyrs 38054 Grenoble Cedex 9, France
B. Osternaud
Affiliation:
SOITEC - Parc technologique des Fontaines - 38190 Bernin, France
P. Besson
Affiliation:
STMicroelectonics - 850, rue Jean Monnet, 38926, Crolles Cedex, France
N. Daval
Affiliation:
SOITEC - Parc technologique des Fontaines - 38190 Bernin, France
F. Andrieu
Affiliation:
CEA / LETI - 17, avenue des Martyrs 38054 Grenoble Cedex 9, France
I. Cayrefourq
Affiliation:
SOITEC - Parc technologique des Fontaines - 38190 Bernin, France
H. Moriceau
Affiliation:
CEA / LETI - 17, avenue des Martyrs 38054 Grenoble Cedex 9, France
T. Ernst
Affiliation:
CEA / LETI - 17, avenue des Martyrs 38054 Grenoble Cedex 9, France
A. Tiberj
Affiliation:
SOITEC - Parc technologique des Fontaines - 38190 Bernin, France
O. Rayssac
Affiliation:
SOITEC - Parc technologique des Fontaines - 38190 Bernin, France
B. Blondeau
Affiliation:
SOITEC - Parc technologique des Fontaines - 38190 Bernin, France
C. Mazure
Affiliation:
SOITEC - Parc technologique des Fontaines - 38190 Bernin, France
C. Lagahe-Blanchard
Affiliation:
CEA / LETI - 17, avenue des Martyrs 38054 Grenoble Cedex 9, France
S. Pocas
Affiliation:
CEA / LETI - 17, avenue des Martyrs 38054 Grenoble Cedex 9, France
A.-M. Cartier
Affiliation:
CEA / LETI - 17, avenue des Martyrs 38054 Grenoble Cedex 9, France
J.-M. Hartmann
Affiliation:
CEA / LETI - 17, avenue des Martyrs 38054 Grenoble Cedex 9, France
P. Leduc
Affiliation:
CEA / LETI - 17, avenue des Martyrs 38054 Grenoble Cedex 9, France
C. Di Nardo
Affiliation:
CEA / LETI - 17, avenue des Martyrs 38054 Grenoble Cedex 9, France
J.-F. Lugand
Affiliation:
CEA / LETI - 17, avenue des Martyrs 38054 Grenoble Cedex 9, France
F. Fournel
Affiliation:
CEA / LETI - 17, avenue des Martyrs 38054 Grenoble Cedex 9, France
M.-N. Semeria
Affiliation:
CEA / LETI - 17, avenue des Martyrs 38054 Grenoble Cedex 9, France
N. Kernevez
Affiliation:
CEA / LETI - 17, avenue des Martyrs 38054 Grenoble Cedex 9, France
Y. Campidelli
Affiliation:
STMicroelectonics - 850, rue Jean Monnet, 38926, Crolles Cedex, France
O. Kermarrec
Affiliation:
STMicroelectonics - 850, rue Jean Monnet, 38926, Crolles Cedex, France
Y. Morand
Affiliation:
STMicroelectonics - 850, rue Jean Monnet, 38926, Crolles Cedex, France
M. Rivoire
Affiliation:
STMicroelectonics - 850, rue Jean Monnet, 38926, Crolles Cedex, France
D. Bensahel
Affiliation:
STMicroelectonics - 850, rue Jean Monnet, 38926, Crolles Cedex, France
V. Paillard
Affiliation:
LPST-UPS - 118 route de Narbonne, F-31062 Toulouse Cedex, France
L. Vincent
Affiliation:
CEMES/ CNRS - BP 4347 Toulouse cedex 4, France
A. Claverie
Affiliation:
CEMES/ CNRS - BP 4347 Toulouse cedex 4, France
P. Boucaud
Affiliation:
IEF / CNRS - Bat 220, Universit Paris XI, 91405 Orsay cedex, France
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Abstract

Strained Silicon On Insulator wafers are today envisioned as a natural and powerfulenhancement to standard SOI and/or bulk-like strained Si layers. For MOSFETs applications, thisnew technology potentially combines enhanced devices scalability allowed by thin films andenhanced electron and hole mobility in strained silicon. This paper is intended to demonstrate byexperimental results how a layer transfer technique such as the Smart Cut™ technology can be usedto obtain good quality tensile Strained Silicon On insulator wafers. Detailed experiments andcharacterizations will be used to characterize these engineered substrates and show that they arecompatible with the applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B2.3
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Ghyselen, B., Aulnette, C., Osternaud, B., Akatsu, T., Mazure, C., Lagahe-Blanchard, C., Pocas, S., Hartmann, J.-M., Leduc, P., Ernst, T., Moriceau, H., Campidelli, Y., Kermarrec, O., Besson, P., Morand, Y., Rivoire, M., Bensahel, D. and Paillard, V., Proc. 3rd International Conference on SiGe(C) Epitaxy and heterostructures, Santa Fe, 9-12th March 2003.Google Scholar
2. Huang, L.J., Chu, J.O., Canaperi, D.F., D'Emic, C.P., Anderson, R.M., Koester, S.J. and Wong, H.-S. Philip, Appl. Phys. Lett. 78, 1267 (2001).Google Scholar
3. Tezuka, T., Sugiyama, N. and Takagi, S., Appl. Phys. Lett. Vol. 79, 1798 (2001).Google Scholar
4. Takagi, S., Mizuno, T., Tezuka, T., Sugiyama, N., Numata, T., Usada, K., Moriyama, Y., Nakaharai, S., Koga, J., Tanabe, A., Hirashita, N. and Maeda, T., Proc. IEDM 2003 Conf. p. 57.Google Scholar
5. Rim, K., Chan, K., Shi, L., Boyd, D., Ott, J., Klymko, N., Cardone, F., Tai, L., Koester, S., Cobb, M., Canaperi, D., To, B., Duch, E., Babich, I., Carruthers, R., Saunders, P., Walker, G., M. Steen and Ieong, M., Proc. IEDM 2003 Conf. p. 49.Google Scholar
6. Drake, T.S., Chleirigh, C. Ni, Lee, M.L., Fitzgerald, E.A., Antoniadis, D.A., Anjum, D.H., Li, J., Hull, R., Klymko, N. and Hoyt, J.L., Appl. Phys. Lett. 83, 875 (2003);Google Scholar
7. www.soitec.com.Google Scholar
8. Auberton-Hervé, A.J. and Maleville, C., Proc. 2002 IEEE SOI Conf. p. 1.Google Scholar
9. Moriceau, H., Fournel, F., Rayssac, O., Cartier, A.-M., Morales, C., Pocas, S., Zussy, M., Jallaguier, E., Biasse, B., Papon, A.-M., Lagahe, C., Aspar, B., Maleville, C., Letertre, F., Ghyselen, B., Barge, T.. ElectroChemical Society Proceedings Vol. 2001–27, p1–16.Google Scholar
10. Ghyselen, B., Wafer Bonding VII : Science, Technology and Applications, 96, ECS Proceedings (PV 2003-19, ISBN 1-56677-402-0), Pennington, NJ (2003).Google Scholar
11. Hartmann, J.M., Bogumilowicz, Y., Holliger, P., Laugier, F., Truche, R., Rolland, G., Séméria, M.N., Renard, V., Olshanetsky, E.B., Estibal, O., Kvon, Z.D., Portal, J.C., Vincent, L., Cristiano, F. and Claverie, A., Semicond. Sci. Technol. 19, 311 (2004).Google Scholar
12 Linder, K.K., Zhang, F.C., Rieh, J.-S., Bhattacharya, P. and Houghton, D., Appl. Phys. Lett. 70, 3224 (1997).Google Scholar
13. Holländer, B., Lenk, St., Mantl, S., Trinkaus, H., Kirch, D., Luysberg, M., Hackbarth, T., Herzog, H.-J., Fichtner, P.F.P., Nucl. Instr. and Meth. in Phys. Res. B 175–177 357–367 (2001).Google Scholar
14. Leitz, C.W., Currie, M.T., Lee, M.L., Cheng, Z.-Y., Antoniadis, D.A. and Fitzgerald, E.A., J. Appl. Phys. 92, 3745 (2002).Google Scholar
15. Ghyselen, B., Hartmann, J.-M., Ernst, T., Aulnette, C., Osternaud, B., Bogumilowicz, Y., Abbadie, A., Besson, P., Rayssac, O., Tiberj, A., Daval, N., Cayrefourq, I., Fournel, F., Moriceau, H., Nardo, C. Di, Andrieu, F., Paillard, V., Cabié, M., Vincent, L., Snoeck, E., Cristiano, F., Rocher, A., Ponchet, A., Claverie, A., Boucaud, P., Semeria, M.-N., Bensahel, D., Kernevez, N. and Mazure, C.. To be pulished in Solid State Electronics / Special issue on strained Si and heterostructures and Devices – August 2004 Google Scholar
16. Hartmann, J.M., Abbadie, A., Vinet, M., Clavelier, L., Holliger, P., Lafond, D., Séméria, M.N. and Gentile, P., J. Cryst. Growth 257, 19 (2003).Google Scholar
17. Sugiyama, N., Moriyama, Y., Tezuka, T., Mizuno, T., Nakahari, S., Usuda, K. and Takagi, S., Jpn. J. Appl. Phys. 42, 4476 (2003).Google Scholar
18. Tiberj, A., Paillard, V., Aulnette, C., Daval, N., Bourdelle, K., Moreau, M., Kennard, M. and Cayrefourcq, I.; these proceedings (MRS Spring 2004; Symposium B).Google Scholar
19. Hobart, K. D., Kub, F.J., Fatemi, M., Twigg, M.E., Thompson, P.E., Kuan, T.S., and Inoki, C.K., Journal of ELECTRONIC MATERIALS, Vol.29, No 7, 2000 (pp897–900).Google Scholar
20. Claverie, A. and Liliental-Weber, Z., Phil. Mag. A, V65, 981–1002 (1992).Google Scholar