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The Strain Status of the Buried Self-assembled InAs quantum dots using MeV technique

Published online by Cambridge University Press:  01 February 2011

Hsing-Yeh Wang ,
C.H. Chen ,
H. Niu ,
S.C. Wu  and
C.P. Lee
Hsing-Yeh Wang
Affiliation:
[email protected], National Chiao Tung University, Electronics Engineering, 1001 Ta Hsueh Road, Hsinchu, N/A, 30043, Taiwan
C.H. Chen
Affiliation:
[email protected], National Tsing Hua University, Physics, Hsinchu, N/A, 30043, Taiwan
H. Niu
Affiliation:
[email protected], Nuclear Science and Technology Development Center, National Tsing Hua University, Hsinchu, N/A, 30043, Taiwan
S.C. Wu
Affiliation:
[email protected], National Tsing Hua University, Physics, Hsinchu, N/A, 30043, Taiwan
C.P. Lee
Affiliation:
[email protected], National Chiao Tung University, Electronics Engineering, 1001 Ta Hsueh Road, Hsinchu, N/A, 30043, Taiwan
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Abstract

The strain status of the buried InAs self-assembled quantum dot was comprehended by measurement first time. Results show the in-plane strain is compressive and lattice in the growth direction is lager than the lattice of GaAs. The strain of the sample annealed at 650 degree relaxes in the growth direction. The growth and the lateral direction become relaxed in the sample annealed at 750 degree.

Keywords

ion beam analysisstress/strain relationshipannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 916: Symposium DD – Solid-State Lighting Materials and Devices , 2006 , 0916-DD02-04
Copyright
Copyright © Materials Research Society 2006

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