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Strain Mapping in SiGe by Visible Raman Spectroscopy

Published online by Cambridge University Press:  17 March 2011

Vasil Pajcini
Vasil Pajcini*
Affiliation:
Charles Evans & Associates
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Abstract

Heterogeneous strain in Si/SiGe for CMOS mobility enhancement may result in device yield losses or IC performance limitations. This lateral heterogeneity in strain can be uniquely measured by Raman spectroscopy. UV Raman and Visible Raman can measure this heterogeneity respectively in the thin Si cap and in the SiGe underlayer. Both UV and Visible Raman are useful. While UV Raman is optimized for the Si channel layer, Visible Raman of the SiGe underlayer provides diagnostic information when trying to understand and reduce the heterogeneity in the Si channel. In principle Visible Raman can also measure the heterogeneity of the strain in the Si channel, but in practice this is very time consuming and not as sensitive as UV Raman. This paper focuses on the kind of heterogeneity strain information available from Visible Raman.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B3.2
Copyright
Copyright © Materials Research Society 2004

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References

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