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Stepped Gate Polysilicon Thin-Film Transistor for Large Area Power Applications
Published online by Cambridge University Press: 10 February 2011
Abstract
For the first time, we report a new poly-Si stepped gate Thin Film Transistor (SG TFT) on glass. The Density of States extracted from measured I-V characteristics has been used to evaluate the device performance with a two dimensional device simulator. The results show that the three-terminal SG TFT device has a switching speed comparable to a low voltage structure and the high on-current capability of a metal field plate (MFP) TFT and the potential for comparable breakdown characteristics.
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- Copyright © Materials Research Society 1998