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Spreading Kinetics of Molten 60Sn40Pb on Higher Melting Temperature Pb-Sn Alloy Substrates

Published online by Cambridge University Press:  21 February 2011

H. Conrad ,
Z. Guo  and
D. Y. Jung
H. Conrad
Affiliation:
Materials Science and Engineering Dept., North Carolina State University, Raleigh, N. C. 27695-7517
Z. Guo
Affiliation:
Materials Science and Engineering Dept., North Carolina State University, Raleigh, N. C. 27695-7517
D. Y. Jung
Affiliation:
Materials Science, IBM Microelectronics Division, 1701 North St., Endicott, NY 13760
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Abstract

The spreading of molten 60Sn40Pb drops on higher melting point Pb-Sn alloy substrates (3 to 10 wt.% Sn) was investigated for reflow temperatures of 205° to 300°C. Following melting the drop assumed the form of a slightly flared, spherical cap with some penetration into the substrate beneath the contact area. The effects of time and temperature on the contact angle θ and the depth of penetration h were of the form

where the apparent activation energy Q was 4.2 kcal/mole for θ and 16 kcal/mole for h. The time exponent m (negative for θ and positive for h) decreased with temperature from ∼ 0.2–0.3 at 205°C to ∼0.05 at 260° and then increased again at higher temperatures. The magnitude of Q for θ is in accord with that for the viscosity of molten Pb-Sn alloys and that for h with a combined liquid-solid diffusion involved in the dissolution. Further work is however needed to identify unequivocally the mechanisms which govern the wetting in these duplex Pb-Sn alloy systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 390: Symposium S – Electronic Packaging Materials Science VIII , 1995 , 189
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Ambrose, J. C., Micholas, M. G. and Stonehow, A. M., Acta Metall. Mater. 40 2483(1992).Google Scholar
2. Tanner, L. H., J. Phys. D: Appl. Phys. 12 1473 (1979).Google Scholar
3. Starov, V. M., Colloid, J. USSR, Engl. Trans. 45(6) 1009 (1983).Google Scholar
4. Gennes, P. G. de, Rev Mod. Phys. 57 827 (1985).Google Scholar
5. Chen, J. D., J. Colloid Interface Sci. 122 60 (1988).Google Scholar
6. Summ, B., Raud, E. and Shchukin, E. D., Dulk. Phys. Chem. 209 232 (1973).Google Scholar
7. Hyppia, J., Analyt. Chem. 20 1039 (1948).Google Scholar
8. Leleh, M. and Marmus, A., J. Colloid Interface Sci. 82 518 (1981)Google Scholar
9. Ambrose, J. C., Nicholas, M. G. and Stoneham, A. M., Acta Metall. Mater. 41 2395(1993).Google Scholar
10. Tomsia, A. P., Pask, J. A. and Loehman, R. E., Ceram. Engng. Sci. Proc.,10 1631 (1984).Google Scholar
11. Kritasalis, P., Coudurier, L. and Eustathopoulos, N., J. Mater. Sci. 26 3400 (1991).Google Scholar
12. Wang, X. H. and Conrad, H., Scripta Met. Mater. 30 725 (1994).Google Scholar
13. Wang, X. H. and Conrad, H., Met. Mater. Trans. 26A 459 (1995).Google Scholar
14. Gorman, J. W. and Preckshot, G. W., Trans. TMS-AIME 212 367 (1958).Google Scholar
15. Ma, C. H. and Swalin, R. A., Acta Metall. 8 388 (1960).Google Scholar
16. Kwakatsu, I., Osawa, T. and Igarashi, O., J. Jap. Inst. Met. 45 847 (1981).Google Scholar
17. Askill, J., Tracer Diffusion Data, Plenum Press, New York, N. Y. (1970).Google Scholar