Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-23T09:17:05.392Z Has data issue: false hasContentIssue false
  • English
  • Français

Solution Processable Nanowire Field-Effect Transistors

Published online by Cambridge University Press:  22 September 2011

Charles Opoku ,
Lichun Chen ,
Frank Meyer  and
Maxim Shkunov
Charles Opoku
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, GU2 7HX, UK
Lichun Chen
Affiliation:
Merck Chemicals, Chilworth Technical Centre, Southampton, SO16 7QD, UK
Frank Meyer
Affiliation:
Merck Chemicals, Chilworth Technical Centre, Southampton, SO16 7QD, UK
Maxim Shkunov
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, GU2 7HX, UK
Get access

Abstract

Hybrid field-effect-transistors (FETs) with germanium nanowire (NW) arrays and organic gate dielectric are presented. The nanowire deposition steps are fully compatible with printed electronics route. NW FETs demonstrate good performance with On/Off ratios of ~103 and hole mobilities of ~13 cm2/Vs in both nitrogen and air atmosphere. These results suggest that the hybrid nanowire FETs could be used in large area inexpensive electronics.

Keywords

Georganicdielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1287: Symposium F – Low-Temperature-Processed Thin-Film Transistors , 2011 , mrsf10-1287-f10-03
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Dodabalapur, A., “Organic and polymer transistors for electronics,” Materials Today, vol. 9, pp. 24–30, 2006.Google Scholar
[2] Hilsum, C., “Flat-panel electronic displays: a triumph of physics, chemistry and engineering,” Philosophical Transactions of the Royal Society Mathematical Physical and Engineering Sciences, vol. 368, p. 1027, 2009.Google Scholar
[3] Park, S. K., Kim, Y.-H., Kim, H.-S., and Han, J.-I., “High Performance Solution-Processed and Lithographically Patterned Zinc-Tin Oxide Thin-Film Transistors with Good Operational Stability,” Electrochem. Solid-State Lett. , vol. 12, p. H256, 2009.Google Scholar
[4] Faber, H., Burkhardt, M., Jedaa, A., Kaelblein, D., Klauk, H., and Halik, M., “Low-Temperature Solution-Processed Memory Transistors Based on Zinc Oxide Nanoparticles,” Adv. Mater., vol. 21, pp. 3099–3104, 2009.Google Scholar
[5] Cao, Q. and Rogers, J. A., “Ultrathin Films of Single-Walled Carbon Nanotubes for Electronics and Sensors: A Review of Fundamental and Applied Aspects,” Adv. Mater., vol. 21, p. 29, 2009.Google Scholar
[6] Sze, S. M., Physics of semiconductor devices: Hoboken, N.J.: Wiley-Interscience, 2007 Google Scholar
[7] Hanrath, T. and Korgel, B. A., “Nucleation and Growth of Germanium Nanowires Seeded by Organic Monolayer-Coated Gold Nanocrystals,” JACS, vol. 124, pp. 1424–1429, 2002.Google Scholar
[8] Hanrath, T. and Korgel, B. A., “Supercritical Fluid–Liquid–Solid (SFLS) Synthesis of Si and Ge Nanowires Seeded by Colloidal Metal Nanocrystals,” Adv. Mater., vol. 15, pp. 437–440, 2003.Google Scholar
[9] Hanrath, T. and Korgel, B. A., “Chemical surface passivation of Ge nanowires,” JACS, vol. 126, p. 15466, 2004.Google Scholar
[10] Wang, D., Wang, Q., Javey, A., Tu, R., Dai, H., Kim, H., McIntyre, P. C., Krishnamohan, T., and Saraswat, K. C., “Germanium nanowire field-effect transistors with SiO and high-kappa HfO gate dielectrics,” Appl. Phys. Lett., vol. 83, pp. 2432–2434, 2003.Google Scholar
[11] Duan, X., Niu, C., Sahi, V., Chen, J., Parce, J. W., Empedocles, S., and Goldman, J. L., “High-performance thin-film transistors using semiconductor nanowires and nanoribbons,” NATURE, vol. 425, pp. 274–278, 2003.Google Scholar
[12] Lu, W., Xie, P., and Lieber, C. M., “Nanowire Transistor Performance Limits and Applications,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 55, pp. 2859–2876, 2008.Google Scholar
[13] Kim, D., Park, Y.-K., Ha, S. C., Huh, J. S., Na, J., Kim, J., and Gyu-Tae, , “Photoconductance of aligned SnO2 nanowire field effect transistors,” Appl. Phys. Lett., vol. 95, pp. 043107 1-3, 2009.Google Scholar
[14] Kalb, W. L., Mathis, T., Haas, S., Stassen, A. F., and Batlogg, B., “Organic small molecule field-effect transistors with CytopTM gate dielectric: eliminating gate bias stress effects,” Appl. Phys. Lett., vol. 90, p. 092104, 2007.Google Scholar
[15] Korgel, B. A. and Hanrath, T., “Influence of Surface States on Electron Transport through Intrinsic Ge Nanowires,” J. Phys. Chem. B, vol. 109, p. 5518, 2005.Google Scholar
[16] Wang, D., Chang, Y.-L., Wang, Q., Cao, J., Farmer, D. B., Gordon, R. G., and Dai, H., “Surface Chemistry and Electrical Properties of Germanium Nanowires,” JACS, vol. 126, p. 11602, 2004.Google Scholar
[17] Schricker, A. D., Joshi, S. V., Hanrath, T., Banerjee, S. K., and Korgel, B. A., “Temperature dependence of the field effect mobility of solution-grown germanium nanowires,” J. Phys. Chem. B, vol. 110, p. 6816, 2006.Google Scholar
[18] Sanghyun, J., Fumiaki, I., Pochiang, C., Hsiao-Kang, C., Chongwu, Z., Young-geun, H., Jun, L., Antonio, F., Tobin, J. M., and David, B. J., “High performance InO nanowire transistors using organic gate nanodielectrics,” Appl. Phys. Lett., vol. 92, p. 222105, 2008.Google Scholar
[19] Dimitrakopoulos, C. D. and Malenfant, P. R. L., “Organic Thin Film Transistors for Large Area Electronics,” Adv. Mater., vol. 2, 2002.Google Scholar
[20] Kuo, A., Won, T. K., and Kanicki, J., “Advanced Amorphous Silicon Thin-Film Transistors for AM-OLEDs,” IEEE Transactions, vol. 55, 2008.Google Scholar