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Simulations of Ge+ and C+ Implantations to form SiGe/Si HBT and Characterization of SiGe and SiGeC Diodes

Published online by Cambridge University Press:  22 February 2011

Ashawant Gupta ,
Jeffrey W. Waters ,
Carmen Cook ,
Cary Y. Yang ,
Akira Fukamia ,
Ken-Ichi Shoji  and
Takahiro Nagano
Ashawant Gupta
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Jeffrey W. Waters
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Carmen Cook
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Cary Y. Yang
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Akira Fukamia
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Ken-Ichi Shoji
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 4026 Kuji, Hitachi, Ibaraki 319–12, Japan
Takahiro Nagano
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 4026 Kuji, Hitachi, Ibaraki 319–12, Japan
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Abstract

Simulations of Ge+ and C+ implantations in Si were performed to study bandgap grading in the SiGeC/Si heterojunction bipolar transistor (HBT). Although no bandgap discontinuity was observed at the base-emitter junction, it was found that a wide-bandgap emitter and a narrow-bandgap base with proper bandgap grading were obtainable with implantation. Electrical characterization of SiGe and SiGeC diodes formed by Ge+ and C+ implantations in Si was carried out. Current-voltage (I-V) measurement results confirm that carbon doping improves the crystalline quality of the germanium-implanted layer. On the other hand, capacitance-voltage (C-V) measurements indicate that both germanium and carbon implantations result in considerable dopant deactivation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 489
Copyright
Copyright © Materials Research Society 1991

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References

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