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Siloxane Polymers as Low Dielectric Materials for Microelectronics

Published online by Cambridge University Press:  21 February 2011

C. P. Wong
C. P. Wong*
Affiliation:
AT&T Bell Laboratories, P. O. Box 900, Princeton, NJ 08542-0900
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Abstract

A modem VLSI device is a complicated three-dimensional structure that consists of multilayer metallization conductor lines which are separated with interlayer-dielectrics as insulation. This VLSI technology drives the IC device into sub-micron feature size that operates at ultra-fast speed (in excess of > 100 MHz). Passivation and interlayer dielectric materials are critical to the device performance due to the conductor signal propagation delay of the high dielectric constant of the material. Low dielectric constant materials are the preferred choice of materials for this reasons. These materials, such as Teflon® and siloxanes (silicones), are desirable because of their low dielectric constant (∈1) = 2.0, 2.7, respectively. This paper describes the use of a low dielectric constant siloxane polymer (silicone) as IC devices passivation layer material, its chemistry, material processes and reliability testing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 390: Symposium S – Electronic Packaging Materials Science VIII , 1995 , 89
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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