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Silicide Technology in Deep Submicron Regime

Published online by Cambridge University Press:  10 February 2011

K Suguro ,
T. Iinuma ,
K Ohuchi ,
K. Miyashita ,
H. Akutsu ,
H. Yoshimura ,
Y. Akasaka ,
K Nakajima ,
K Miyano  and
Y. Toyoshima
K Suguro
Affiliation:
ULSI Process Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577, [email protected]
T. Iinuma
Affiliation:
ULSI Process Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577, [email protected]
K Ohuchi
Affiliation:
ULSI Device Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577
K. Miyashita
Affiliation:
ULSI Device Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577
H. Akutsu
Affiliation:
ULSI Process Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577, [email protected]
H. Yoshimura
Affiliation:
ULSI Device Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577
Y. Akasaka
Affiliation:
ULSI Process Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577, [email protected]
K Nakajima
Affiliation:
ULSI Process Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577, [email protected]
K Miyano
Affiliation:
ULSI Process Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577, [email protected]
Y. Toyoshima
Affiliation:
ULSI Device Eng. Lab., Microelectronics Eng. Lab., TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan, +81-45-770-3663, +81-45-770-3577
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Abstract

Silicide technology using cobalt-titanium alloy has been developed for sub-quarter micron devices. Extremely flat and epitaxial CoSi2 films are successfully grown on a (100) Si substrate. Improved SALICIDE process is not influenced by native oxide on a Si surface. This technology will be very useful in deep sub-quarter micron devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 171
Copyright
Copyright © Materials Research Society 1998

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References

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