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Silicide Formation at HfO2/Si and ZrO2/Si Interfaces Induced by Ar+ Ion Bombardment
Published online by Cambridge University Press: 01 February 2011
Abstract
The effect of ion bombardment with Ar+ at the energy E=2.5 keV on HfO2/Si and ZrO2/Si interfaces has been investigated in situ with XPS by growing thin metal oxide layers and further ion etching them. It is shown that a silicide layer ∼2 nm in thickness is forming, and Ar+ ion beam affects MeO2/Si (Me=Hf, Zr) interface at thickness ≤3 nm. Ex situ AFM/STM corroborates the formation of silicide layer at metal oxide/silicon interface.
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- Copyright © Materials Research Society 2004