Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-05T04:59:24.254Z Has data issue: false hasContentIssue false

Sensitivity of Electrically Active Defect Spectra to Processing Conditions in Mev Heavy Ion Implanted Silicon

Published online by Cambridge University Press:  10 February 2011

Y.N. Mohapatra
Affiliation:
Department of Physics, Indian Institute of TechnologyKanpur, India- 208016
P.K. Giri
Affiliation:
Department of Physics, Indian Institute of TechnologyKanpur, India- 208016
Get access

Abstract

We have carried out electrical characterization of defects in heavily damaged silicon, where damage is created by MeV heavy ions at doses near but below amorphization threshold and samples are subjected to different annealing conditions. Defect characterization is carried out using combination of deep level transient spectroscopy (DLTS) and isothermal time analyzed spectroscopy (TATS). The defect spectrum is observed to be sensitive to I) furnace annealing between 400–600°C, ii) low temperature oven annealing at 160°C, and iii) forward injection current. The observed changes in spectra are indicators of extreme sensitivity of dominant defects to relaxation of the disordered medium, and recombination enhanced reactions. Surprisingly the defect spectra is usually dominated by a single peak with unbroadened lineshape characteristic of discrete energy level in the bandgap, though electrical signatures keep varying for different processing conditions. In the light of these measurements, we discuss the nature of stability and metastability of the defects believed to be due to intrinsic defect clusters.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Stolk, P.A., Gossmann, H. J, Eaglesham, D.J., Jacobson, D.C., Rafferty, C.S., Golmer, G.H., Jairaz, M., Poate, J.M., Luftman, H.S., and Haynes, T.E., J.Appl. Phys. 81, p. 6031 (1997)Google Scholar
2. Benton, J.L., Libertino, S., Kringhoj, P., Eaglesham, D.J., Poate, J.M., and Coffa, S., J. Appl. Phys. 82, 120 (1997)Google Scholar
3. Giri, P.K. and Mohapatra, Y.N., Appl. Phys. Lett. 71, p. 1682 (1997)Google Scholar
4. Giri, P.K. and Mohapatra, Y.N., J. Appl. Phys. 84, p. 19011911 (1998)Google Scholar
5. Agarwal, S., Mohapatra, Y.N., and Singh, V.A., J.Appl. Phys. 77, p.3155 (1995)Google Scholar