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Self-energy Models for Scattering in Semiconductor Nanoscale Devices: Causality Considerations and the Spectral Sum Rule

Published online by Cambridge University Press:  18 July 2013

John R. Barker  and
Antonio Martinez
John R. Barker
Affiliation:
School of Engineering, University of Glasgow, Glasgow, G12 8LT, United Kingdom,
Antonio Martinez
Affiliation:
College of Engineering, Swansea University, Swansea, United Kingdom.
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Abstract

The modelling of of silicon gate-all-around nanowire transistors by non-equilibrium Green function methods requires the computation of self-energies for inelastic electron-phonon interactions. It is shown that many approximations designed to reduce numerical complexityto these self-energies in fact fail because they do not satisfy appropriate causality conditions. Four familiar approximations are discussed and their failures resolved. It is also shown that a condition for the spectral density sum rule to hold (and hence accurate density of states in energy) depends on a simple causality condition.

Keywords

deviceselectron-phonon interactionsSi
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1551: Symposium R – Nanostructured Semiconductors and Nanotechnology , 2013 , pp. 17 - 22
Copyright
Copyright © Materials Research Society 2013 

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References

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