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Selective Area Heteroepitaxy of Nano-AlGaN UV Excitation Sources for Biofluorescence Application

Published online by Cambridge University Press:  01 February 2011

Vibhu Jindal ,
James Grandusky ,
Fatemeh Shahedipour-Sandvik ,
Steven LeBoeuf ,
Joleyn Balch  and
Todd Tolliver
Vibhu Jindal
Affiliation:
[email protected] University of New York-AlbanyCollege of Nanoscale Science & EngineeringRm. 219, 255 Fuller Rd.Albany NY 12203United States
James Grandusky
Affiliation:
[email protected], State University of New York-Albany, College of Nanoscale Science & Engineering, Rm. 219, 255 Fuller Rd., Albany, NY, 12203, United States
Fatemeh Shahedipour-Sandvik
Affiliation:
[email protected], State University of New York-Albany, College of Nanoscale Science & Engineering, Rm. 219, 255 Fuller Rd., Albany, NY, 12203, United States
Steven LeBoeuf
Affiliation:
[email protected], General Electric, Global Research Center, Niskayuna, NY, 12309, United States
Joleyn Balch
Affiliation:
[email protected], General Electric, Global Research Center, Niskayuna, NY, 12309, United States
Todd Tolliver
Affiliation:
[email protected], General Electric, Global Research Center, Niskayuna, NY, 12309, United States
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Abstract

We report on the selective area heteroepitaxy and facet evolution of AlGaN nanostructures on GaN/sapphire substrate using various mask materials. We also report on the challenges associated with selection of an appropriate mask material for selective area heteroepitaxy of AlGaN with varying Al composition. The shape and the growth rate of the nanostructures are observed to be greatly affected by the mask material. The evolution of the AlGaN nanostructures and Al incorporation were studied exhaustively as a function of growth parameters; including temperature, pressure, NH3 flow, total alkyl flow and TMAl/(TMAl+TMGa) ratio. The growth rate of nanostructures was reduced drastically when higher Al percentage AlGaN nanostructures were grown. The growth rates were increased for higher Al percentage AlGaN using a surfactant which resulted in a high quality pyramidal structure. As indicated by high resolution x-ray diffraction (XRD) and cathodoluminescence (CL) spectroscopy, composition of Al in the AlGaN nanostructure is significantly different from that of a thin film grown under the same growth conditions.

Keywords

III-Vmetalorganic depositionnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 916: Symposium DD – Solid-State Lighting Materials and Devices , 2006 , 0916-DD05-03
Copyright
Copyright © Materials Research Society 2006

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References

1 Gherasimova, M., Su, J., Cui, G., Ren, Z. -Y., Jeon, S. -R., Han, J., He, Y., Song, Y. -K., Nurmikko, A. V., Ciuparu, D. and Pfefferle, L., Physica Status Solidi (c), Vol. 2, 2361, (2005).Google Scholar
2 Qian, Fang, Li, Yat, Gradečak, Silvija, Wang, Deli, Barrelet, Carl J., and Lieber, Charles M., Nano letters, Vol 4, 1975, (2004).Google Scholar
3 Gradečak, Silvija, Qian, Fang, Li, Yat, Park, Hong-Gyu, and Liebera, Charles M., Applied Physics Letter, Vol 87, 173111, (2005).Google Scholar
4 Su, J. et.al., Applied Physics Letter, Vol 87, 183108, (2005).Google Scholar
5 Heikman, Sten, Keller, Stacia, Denbaars, Steven P., Mishra, Umesh K., Bertram, Frank and Christen, Jürgen, Japanese Journal of Applied Physics, Vol 42, 6276, (2003).Google Scholar
6 Kato, Tomonobu, Honda, Yoshio, Kawaguchi, Yasutoshi, Yamaguchi, Masahito and Sawaki, Nobuhiko Japanese Journal of Applied Physics, Vol 40, 1896, (2001).Google Scholar
7 Haramatsu, K., Nishiyama, K., Motogaito, A., Miyake, H., Iyechika, Y., and Maeda, T., Physica Status Solidi (a), Vol 176, 535, (1999).Google Scholar
8 Du, Danxu, Srolovitz, David J., Coltrin, Michael E. and Mitchell, Christine C., Physical Review Letters, Vol 95, 155503, (2005).Google Scholar
9 Jiang, H. X., Lin, J. Y., Zeng, K. C. and Yang, W., Applied Physics Letter, Vol 75, 763, (1999).Google Scholar
10 Bidnyk, S., Little, B. D., Cho, Y. H., Krasinski, J., Song, J. J., Yang, W. and McPherson, S. A., Applied Physics Letter, Vol 73, 2242, (1998).Google Scholar
11 Kondratyev, A.V., Talalaev, R.A., Lundinc, W.V., Sakharovc, A.V., Tsatsul'nikovc, A.V., Zavarinc, E.E., Fominc, A.V. and Sizov, D.S., Journal of Crystal Growth, Vol 272, 420, (2004).Google Scholar
12 Dai, L., Liu, S. F., Youl, L. P., Zhang, J. C. and Qin, G. G., Journal of Physics: Condensed Matter, Vol 17, L445, (2005).Google Scholar
13 Keller, S., Heikman, S., Ben-Yaacov, I., Shen, L., DenBaars, S. P., and Mishra, U. K., Applied Physics Letter, Vol 79, 3449, (2001).Google Scholar
14 Jindal, V. et.al., submitted in APL (2006).Google Scholar