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Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN

Published online by Cambridge University Press:  05 June 2013

Yiting Sun ,
Elisabeth Levrau ,
Michiel Blauw ,
Johan Meersschaut ,
Patrick Verdonck ,
Herbert Struyf ,
Christophe Detavernier ,
Mikhail Baklanov ,
Steven De Feyter  and
Silvia Armini
Yiting Sun
Affiliation:
imec, Kapeldreef 75, B-3001, Leuven, Belgium KU Leuven, Department of Chemistry, Celestijnenlaan 200f, 3001 Heverlee
Elisabeth Levrau
Affiliation:
Department of Solid State Sciences, CoCooN, Ghent University, Krijgslaan 281 (S1), Ghent 9000, Belgium
Michiel Blauw
Affiliation:
imec-NL, Holst center, Eindhoven, The Netherlands
Johan Meersschaut
Affiliation:
imec, Kapeldreef 75, B-3001, Leuven, Belgium
Patrick Verdonck
Affiliation:
imec, Kapeldreef 75, B-3001, Leuven, Belgium
Herbert Struyf
Affiliation:
imec, Kapeldreef 75, B-3001, Leuven, Belgium
Christophe Detavernier
Affiliation:
Department of Solid State Sciences, CoCooN, Ghent University, Krijgslaan 281 (S1), Ghent 9000, Belgium
Mikhail Baklanov
Affiliation:
imec, Kapeldreef 75, B-3001, Leuven, Belgium
Steven De Feyter
Affiliation:
KU Leuven, Department of Chemistry, Celestijnenlaan 200f, 3001 Heverlee
Silvia Armini
Affiliation:
imec, Kapeldreef 75, B-3001, Leuven, Belgium
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Abstract

In this work, a novel low dielectric constant (low-k) pore sealing approach was engineered by depositing firstly a sub-2 nm SAMs and then a 3 nm TiN barrier film. The low-k film was pretreated by plasma to introduce hydroxyl groups onto the surface, followed by SAMs deposition. Then a TiN film was deposited from tetrakis(dimethylamino)titanium (TDMAT) via ALD as a dielectric barrier. Penetration of Ti atoms into low-k was measured and used to evaluate the sealing ability of SAMs. For the samples covered with SAMs, around 90% reduction of Ti atoms penetration was achieved. The pore radius was reduced to below 0.5 nm after the barrier deposition. The ∆k after pretreatment and after SAMs are 0.1 and 0.16, respectively.

Keywords

dielectricbarrier layerporosity
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1559: Symposium AA – Advanced Interconnects for Micro- and Nanoelectronics—Materials, Processes and Reliability , 2013 , mrss13-1559-aa05-22
Copyright
Copyright © Materials Research Society 2013 

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References

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