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Scanning Photocurrent Microscopy of as-Grown Silicon Nanowire Metallurgical Junctions

Published online by Cambridge University Press:  23 August 2013

Mark Triplett ,
M. Saif Islam  and
Dong Yu
Mark Triplett
Affiliation:
Department of Physics, University of California, Davis, California 95616, USA Department of Electrical and Computer Engineering, University of California, Davis, California 95616, USA
M. Saif Islam
Affiliation:
Department of Electrical and Computer Engineering, University of California, Davis, California 95616, USA
Dong Yu
Affiliation:
Department of Physics, University of California, Davis, California 95616, USA
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Abstract

During the epitaxial bottom up growth of nanowire (NW) arrays, occasional kinks in growth direction can lead to intersecting and consequently self-welded crystalline connections between NWs. In order to study these self-welded metallurgical NW junctions, a NW bridge device architecture which requires no post-growth processing was used to grow and stabilize Si NW junctions. Scanning Photocurrent Microscopy (SPCM) was used to study the optoelectronic properties of the NW junctions as well as the characteristics of the NW bridge devices. SPCM measurements show a bias dependent photocurrent (PC) response at the NW junction indicating local band bending at this location. A decay of the PC response away from the junction is also seen in the secondary NW channel ensuring an electrical connection. These junction properties may be important for ensemble NW optical devices.

Keywords

optoelectronicSinanostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1551: Symposium R – Nanostructured Semiconductors and Nanotechnology , 2013 , pp. 29 - 33
Copyright
Copyright © Materials Research Society 2013 

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References

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