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Roll-to-Roll Apparatus for Residue-Free Direct Stamping of Functional Nano-Inks

Published online by Cambridge University Press:  22 February 2013

Jiseok Kim ,
Ting Hsieh  and
Woo Soo Kim
Jiseok Kim
Affiliation:
Mechatronic Systems Engineering, School of Engineering Science, Simon Fraser University, Surrey, B.C. Canada V3T 0A3
Ting Hsieh
Affiliation:
Mechatronic Systems Engineering, School of Engineering Science, Simon Fraser University, Surrey, B.C. Canada V3T 0A3
Woo Soo Kim
Affiliation:
Mechatronic Systems Engineering, School of Engineering Science, Simon Fraser University, Surrey, B.C. Canada V3T 0A3
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Abstract

A tabletop prototype of a roll-to-roll (R2R) direct stamping apparatus has been developed. The prototype is about 100 cm long, 30 cm wide and 40 cm high and is operational up to the web speed of 1 m/min. While upper rolls carry a web with a patterned stamp on it clockwise, a sprayer on top of the R2R apparatus dispenses the nano-ink to fill in the stamp. Two other rolls with adhesive films completely remove the residual layer on the stamp. Final products remain on the substrate after de-stamping in which the web rolls up and the substrate moves to the further right. This roll-to-roll direct stamping apparatus demonstrates high throughput and material efficiency for fabrication of flexible micro- and nano-electronic devices.

Keywords

spray depositionnanoscaleelectronic material
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1529: Symposium WW – Roll-to-Roll Processing of Electronics and Advanced Functionalities , 2012 , mrsf12-1529-ww03-05
Copyright
Copyright © Materials Research Society 2013

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References

REFERENCES

Gundlach, D. J., Nat. Mater. 6, 173 (2007).CrossRefGoogle Scholar
Oh, K., Lee, B. H., Hwang, J. K., Lee, H., Lee, K. H., Im, S., and Sung, M. M., Small 5, 558–561 (2009).CrossRefGoogle Scholar
Ko, S. H., Park, I., Pan, H., Grigoropoulos, C. P., Pisano, A. P., Luscombe, C. K., and Frechet, Jean M. J., Nano Lett. 7, 1869–1877 (2007).CrossRefGoogle Scholar
Hwang, J. K., Cho, S., Dang, J. M., Kwak, E. B., Song, K., Moon, J., and Sung, M. M., Nat. Nanotechnol. 5, 742–748 (2010).CrossRefGoogle Scholar
Kim, J., Wubs, K., Bae, B. S., and Kim, W. S., Sci. Technol. Adv. Mater. 13, 035004 (2012).CrossRefGoogle Scholar
Ahn, S. H. and Guo, L. J., ACS Nano 3, 2304–2310 (2009).CrossRefGoogle Scholar
Park, H. J., Kang, M. G., Ahn, S. H., and Guo, L. J., Adv. Mater. 22, E247–E253 (2010).CrossRefGoogle Scholar
Jeans, A., Almanza-Workman, M., Cobene, R., Elder, R., Garcia, R., Gomez-Pancorbo, F., Jackson, W., Jam, M., Kim, H. J., Kwon, O., Luo, H., Maltabes, J., Mei, P., Perlov, C., Smith, M., Taussig, C., Jeffrey, F., Braymen, S., Hauschildt, J., Junge, K., Larson, D., and Stieler, D., Proc. SPIE 7637, 763719 (2010).CrossRefGoogle Scholar