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Resistance Switching In Ferroelectric Materials

Published online by Cambridge University Press:  01 February 2011

Tingkai Li  and
Sheng Teng Hsu
Tingkai Li
Affiliation:
[email protected], Sharp Laboratories, Inc., PTL, 5700 Pacific Rim Blvd., Camas, WA, 98607, United States, 360-834-8554, 360-834-8689
Sheng Teng Hsu
Affiliation:
[email protected], Sharp labs. of America, Inc., PTL, 5700 NW Pacific Rim. Blvd., Camas, WA, 98607, United States
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Abstract

A ferroelectric crystal with perovskite structure such as PbZr1−xTixO3 (PZT), SrBi2Ta2O9 (SBT), Bi3La1−xTixO12 (BLT) and non-perovskite structure such as Pb3Ge5O11 (PGO) have two polarization states, which can generate two resistance states: high resistance and low resistance states. These properties can be used for resistance random access memory applications (RRAM). When a ferroelectric capacitor is polarized an internal electric field opposite polarity to the external applied field is generated. As a result there is a large resistance change at a given bias voltage between the two polarization states of the capacitor. It is the purpose of this paper to show that the ferroelectric capacitor may be used as a current memory cell of non-destructive readout (NDRO) non-volatile Random Access Memory array. It will also be shown that each current sensing ferroelectric memory cell stores two bits of memory information and exhibits long memory retention and excellent endurance properties.

Keywords

memoryferroelectricthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I05-02
Copyright
Copyright © Materials Research Society 2007

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References

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