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Reduction of p+-n+ Junction Tunneling Current for Base Current Improvement in Si/SiGe/Si Heterojunction Bipolar Transistors

Published online by Cambridge University Press:  22 February 2011

Ž Matutinović-Krstelj ,
E. J. Prinz ,
P. V. Schwartz  and
J. C. Sturm
Ž Matutinović-Krstelj
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
E. J. Prinz
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
P. V. Schwartz
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
J. C. Sturm
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
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Abstract

A reduction of parasitic tunneling current by three orders of magnitude in epitaxial p+-n+ junctions grown by Rapid Thermal Chemical Vapor Deposition (RTCVD) compared to previously published ion implantation results is reported. These results are very important for the reduction of base current in scaled homojunction and Si/SiGe/Si heterojunction bipolar transistors. High reduction in tunneling currents allows higher limits to transistor base and emitter dopings. Significant tunneling was observed when the doping levels at the lighter doped side of the junction were of the order of 1×1019cm−3 for both Si/Si and SiGe/Si devices. These results were confirmed by I-V measurements performed at different temperatures. Since the tunneling current is mediated by midgap states at the junction, these results demonstrate the high quality of the epitaxial interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 445
Copyright
Copyright © Materials Research Society 1991

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References

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