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Reactive Magnetron Sputtering of Silicon in AR + CH4: Identity and Energy of the Slc Growth Species

Published online by Cambridge University Press:  21 February 2011

M. P. Fitzner  and
J. R. Abelson
M. P. Fitzner
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana IL 61801
J. R. Abelson
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana IL 61801
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Abstract

Double-modulation mass spectrometry is used to analyze the identity and energy distribution of the particle flux during low-temperature growth of Si1−xCx by reactive magnetron sputtering of a silicon target in 3 mTorr argon and 0 – 0.35 mTorr methane. The ion fluxes, methane consumption, film deposition rate, and film composition are determined as a function of the methane partial pressure at fixed target current. Argon, silicon, carbon and hydrocarbon ions are detected at the substrate position. The argon and hydrocarbon ions have a narrow energy distribution consistent with the plasma potential. The silicon and carbon ions have a broad energy spread, consistent with that of sputtered neutrals which are post-ionized by the plasma. The film composition (C/Si) varies in the same manner as the arrival ratio of (C+/Si+) ions, but does not correlate well with the arrival ratio of (ΣCHX+/Si+) ions or the methane consumption rate. We conclude that the main source of carbon in Si1−xCx films is the sputtering of C atoms from the Si target surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 435
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Ivanov, I., Statev, S., Petrov, I. and Orlinov, V., Vacuum 00, 1 (1992)Google Scholar
2. Myers, A. M., Ruzie, D. N., Powell, R.C., Maley, N., Pratt, D.W., Greene, J.E., Abelson, J.R., Journal of Vacuum Science and Technology A8, p. 1668, (1990)Google Scholar
3. Rapp, D., Englander-Golden, and Briglia, D., The Journal of Chemical Physics 42, 4081, (1965)Google Scholar
4. Rapp, D. and Englander-Golden, , The Journal of Chemical Physics 43, 1464, (1965)Google Scholar
5. Wahab, Q., Hultman, L., Sundgren, J.-E. and Willander, M., Materials Science and Engineering B11, 61, (1992)Google Scholar
6. Wahab, Q., Glass, R. C., Ivanov, I., Birch, J., Sundgren, J.-E. and Willander, M., Journal of Applied Physics 74, 1663, (1993)Google Scholar