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Rapid Thermal Processing Requirements for 0.35-µm IC Technologies and Beyond1

Published online by Cambridge University Press:  22 February 2011

Mehrdad M. Moslehi
Mehrdad M. Moslehi*
Affiliation:
CVC Products, Inc., 47061 Warm Springs Blvd., Fremont, CA 94539
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Abstract

This paper will present an overview of rapid thermal processing (RTP) technologies for fastcycle-time IC production. RTP has experienced significant advances in equipment design, process control capabilities, and unit process applications over the past eight years. The Microelectronics Manufacturing Science and Technology (MMST) program at TI successfully demonstrated CMOS IC production in a single-wafer factory with all-RTP thermal fabrication for various anneals, oxidations, and chemical-vapor depositions. The use of RTP in conjunction with other single-wafer processes enabled 0.35 µm IC fabrication with a 3-day cycle time. Selected RTP equipment, sensor, and process control developments will be reviewed. The RTP applications and requirements for state-of-the-art and future IC technologies will be described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 273
Copyright
Copyright © Materials Research Society 1994

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Footnotes

2

Formerly with Texas Instruments, Inc., Dallas, TX

1

Invited Paper.

References

REFERENCES

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