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Rapid Thermal Processing of Silicon Ion Implanted Channel Layers in GaAs

Published online by Cambridge University Press:  28 February 2011

Tohru Hara  and
Jeffrey C. Gelpey
Tohru Hara
Affiliation:
Hosei University, Tokyo 184, Japan
Jeffrey C. Gelpey
Affiliation:
Eaton Thin Film Systems, 35 Cherry Hill Dr., Danvers, Massachusetts 01923
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Abstract

The use of Rapid Thermal Processing (RTP) for the activation of silicon ion implanted channel layers in GaAs MESFET devices has been studied. Tungsten-halogen lamp and Water-wall DC arc lamp RTP have been compared. The arc lamp gave superior abruptness of the carrier concentration profile (78% at 850°C for 15 seconds or 1000°C for 2 seconds) and dopant activation greater than 60%. These parameters are important to achieve good MESFETs fabricated using arc lamp RTP was also studied. The transconductance (gm) of the devices usinq RTP was 78mS/mm which is much higher than achieved with similar samples using furnace annealing. Both capped and capless RTP was examined. Although capped annealing generally yields superior surface quality, the capless annealing provided good electrical properties in a process window which also yielded adequate surface quality and good devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 417
Copyright
Copyright © Materials Research Society 1987

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References

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