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Rapid Thermal Nitridation of Thin Oxides

Published online by Cambridge University Press:  28 February 2011

D.K. Shih ,
S.K. Lee ,
Y.H. Ku ,
D.L. Kwong  and
S. Lee
D.K. Shih
Affiliation:
The University of Texas at Austin, Microelectronics Research Center, Dept. of Electrical Engineering and Computer Engineering,Austin, TX 78712
S.K. Lee
Affiliation:
The University of Texas at Austin, Microelectronics Research Center, Dept. of Electrical Engineering and Computer Engineering,Austin, TX 78712
Y.H. Ku
Affiliation:
The University of Texas at Austin, Microelectronics Research Center, Dept. of Electrical Engineering and Computer Engineering,Austin, TX 78712
D.L. Kwong
Affiliation:
The University of Texas at Austin, Microelectronics Research Center, Dept. of Electrical Engineering and Computer Engineering,Austin, TX 78712
S. Lee
Affiliation:
NCR Corporation, 1635 Aeroplaza Dr., Colorado Springs, Colorado 80916
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Abstract

In this paper the kinetics of initial nitridation of thermal oxides is studied by using rapid thermal nitridation of thin oxides. FTIR and AES were used to investigate the chemical properties of nitrided oxide films. The amount of the nitrogenincorporated in and the oxygen escaped from 100Å oxides has been characterized quantitatively as a function of RTN conditions. Results show that RTN at 1100° for 120s incorporates about 85% and 12% of the maximum nitrogen concentration value at oxide surface and bulk, respectively. The nitrogen pile up peak at interface can be seen after RTN at 1100°C with the time as short as 5 s. Study of the effects of the nitridation temperature and the original oxide film thickness indicates that the reaction species has permeated through oxides before effective replacement reaction takes place. The diffusion coefficient of the permeating species is estimated of the value larger than 40−13cm2/s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 121
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Ito, Kato.I., Inoue, S., Nakamura, T., and Isikawa, H., Japan. J. Appl. Phys., vol.2, suppl. 21-1, p.153 (1982).Google Scholar
2. Ning, T. N., Cook, P. W., Dennard, R. H., Osburn, C. M., Schuster, S. W. and Yu, H. N. IEEE Trans. Electron Devices, ED-26, 346 (1979).Google Scholar
3. Korchartsev, A. and Frantsuzov., A. Mikroelektronika, Vol. 8, 439 (1979).Google Scholar
4. Ginold, H., Wong, S., Ekstedt, T., Sodini, C., Kwan, S., Jackson, K., and Martinez., L., IEDM Tech. Dig., 43 (1982).Google Scholar
5. Hayafuji, , and Kajiwara, K., J. Electrochem. Soc., 129, 2102 (1982).Google Scholar
6. Ito, T., Nozaki, T., and Tshikawa, H., J. Electrochem. Soc. 127, 2053 (1980).Google Scholar
7. Terry, F.L., Naiman, M.L., Aucoin, R.J., and Senturia, S.D., IEEE Trans. Nuc. Sci., NS-28, 4389 (1981).Google Scholar
8. Habraken, F.H., Kuiper, A.E.T., and Tamminga, Y., J. Appl. Phys. 53, 6996(1982).Google Scholar
9. Vasquez, R. P. and Madhukar, J. Appl. Phy. 60, 234 (1986).Google Scholar
10. Moslehi, M. M. and Saraswat, K. C., IEEE Trans. on Elec. Dev., ED-32, 106 (1985).Google Scholar
11. Nulman, J., krusius, J. P. and Rathbun, I., IEEE Int. Elec. Dev. Meet. Tech. Digest, 169 (1983).Google Scholar