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Rapid Thermal Diffusion of Zinc In GaAs

Published online by Cambridge University Press:  28 February 2011

T.S. Kalkur ,
Y.C. Lu  and
C.A. Paz de Araujo
T.S. Kalkur
Affiliation:
Microelectronics Research LaboratoriesUniversity of Colorado at Colorado SpringsColorado Springs, Co 80933–7150
Y.C. Lu
Affiliation:
Microelectronics Research LaboratoriesUniversity of Colorado at Colorado SpringsColorado Springs, Co 80933–7150
C.A. Paz de Araujo
Affiliation:
Microelectronics Research LaboratoriesUniversity of Colorado at Colorado SpringsColorado Springs, Co 80933–7150
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Abstract

Rapid thermal diffusion of zinc into semi-insulating GaAs from spin-on zinc silica film is investigated. The rapid thermal diffusion is performed for various diffusion times (5 to 25 sec) and temperatures (800° to 950° C) with tungstenhalogen lamps as the heat source. The sheet resistivity, surface hole concentration and mobility of these zinc diffused layers as measured by Van der Pauw technique shows the formation of shallow p+ layer. The surface morphology of these diffused layers are observed in a low voltage Scanning Electron Microscope (SEM) and the depth profile of diffused impurities are determined by Secondary Ion Mass Spectroscopy (SIMS). Nonalloyed ohmic contacts are formed on these zinc diffused layers and the contact resistivity is determined by the Transmission Line Method (TLM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 461
Copyright
Copyright © Materials Research Society 1987

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References

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