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Rapid Thermal Chemical Vapor Deposition of Titanium Nitride for Barrier Application

Published online by Cambridge University Press:  22 February 2011

B. Fröschle ,
R. Leutenecker ,
U. Cao-Minh  and
P. Ramm
B. Fröschle
Affiliation:
Fraunhofer-Institute for Solid State Technology, Hansastr. 27 d, D-80686 Munich, Germany
R. Leutenecker
Affiliation:
Fraunhofer-Institute for Solid State Technology, Hansastr. 27 d, D-80686 Munich, Germany
U. Cao-Minh
Affiliation:
Fraunhofer-Institute for Solid State Technology, Hansastr. 27 d, D-80686 Munich, Germany
P. Ramm
Affiliation:
Fraunhofer-Institute for Solid State Technology, Hansastr. 27 d, D-80686 Munich, Germany
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Abstract

Today there are many investigations of titanium nitride (TiN) deposition as diffusion barriers in microelectronics, especially with Chemical Vapor Deposition (CVD) techniques. In our newly developed Rapid Thermal CVD (RTCVD) process, we combine the conventional LPCVD process of TiN using titanium (IV) chloride and ammonia with the advantages of a RTCVD reactor. With regard to the ability of fast temperature change especially to reach the anneal temperature and to cool down to room temperature in the annealing ambient, it is possible to perform the entire processing sequence within one single processing chamber. The influences of deposition temperature, as well as the effects of the temperature during a subsequent in situ anneal step on the properties of the layers is analyzed. TiN layers with a specific resistivity as low as 250 μΩ-cm even at deposition temperatures of 450 °C are obtained. The resistivity of the layers and the chlorine content is nearly half of the films without an anneal step. The capability of these layers for ULSI application is shown by depositing TiN in submicron contact holes with a step coverage of nearly 100 %.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 123
Copyright
Copyright © Materials Research Society 1994

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References

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