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Rapid Thermal Chemical Vapor Deposition of Polycrystalline Silicon From Dichlorosilane

Published online by Cambridge University Press:  21 February 2011

Ahmad Kermani ,
Kristian E. Johnsgard ,
Sailish Suthar ,
Ki-Bum Kim  and
Chung Lam
Ahmad Kermani
Affiliation:
RAPRO Technology Inc., Fremont, CA 94539.
Kristian E. Johnsgard
Affiliation:
RAPRO Technology Inc., Fremont, CA 94539.
Sailish Suthar
Affiliation:
Philips R&D Center, Signetics Company, Sunnyvale, CA 94088-3409
Ki-Bum Kim
Affiliation:
Philips R&D Center, Signetics Company, Sunnyvale, CA 94088-3409
Chung Lam
Affiliation:
IBM, Essex Jct., VT 05452
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Abstract

Rapid Thermal Chemical Vapor Deposition (RTCVD) of undoped and insitu doped polycrystalline silicon films has been accomplished in a cold-wall reactor. Dichlorosilane was used for the silicon source and AsH3 gas was used as the dopant source. Thedeposition kinetics of poly-silicon films on silicon dioxide over a range of deposition temperatures, pressures and carrier gas chemistries was studied. Both blanket and selective deposition modes were examined. The poly-silicon films were examined by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) for morphology and grain size analysis. Using X-ray diffraction technique, preferred grain orientation dependency of poly-silicon films on growth conditions was investigated. Dopant incorporation, dopant activation and oxygen content of polysilicon films were measured by secondary ion mass spectrometry (SIMS), four point probe, and spreading resistance profiling (SRP) techniques.

This paper is to report the results of material characterization of polysilicon films deposited by RTCVD, and to address the applications and advantages of ‘Integrated Processing’ technology involving deposition of polysilicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 21
Copyright
Copyright © Materials Research Society 1990

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