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Rapid Thermal Annealing of High Energy Si Implants Into GaAs

Published online by Cambridge University Press:  28 February 2011

Ronald N. Legge  and
Wayne M. Paulson
Ronald N. Legge
Affiliation:
Motorola Inc., 5005 E. McDowell Rd., Phoenix, Arizona 85008
Wayne M. Paulson
Affiliation:
Motorola Inc., 5005 E. McDowell Rd., Phoenix, Arizona 85008
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Abstract

Rapid thermal annealing (RTA) technology offers potential advantages for the processing of ion implanted GaAs. High energy implants of 300 keV or above are used for power MESFETs as well as in the ohmic contacts for low noise devices. The purpose of this paper is to investigate and characterize the RTA of Si implants into LEC GaAs using implant energies of 300keV and above, and a range of doses from 2.3 ×1012 to 3×1014 /cm2. The wafers were analyzed using capacitance-voltage and Hall measurements. Factors which cause variability in pinchoff voltage are identified and an RTA process comparable to conventional furnace annealing is presented for low dose implants. Superior implant activation is observed for higher dose implants through the use of higher annealing temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 449
Copyright
Copyright © Materials Research Society 1987

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References

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