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The Prs2O3 /Si(001) Interface: a Mixed Si-Pr Oxide

Published online by Cambridge University Press:  01 February 2011

Dieter Schmeißer ,
Jarek Dabrowski  and
Hans-Joachim Müssig
Dieter Schmeißer
Affiliation:
Angewandte Physik-Sensorik, BTU Cottbus, Postfach 10 13 44, D-03013 Cottbus, Germany
Jarek Dabrowski
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Hans-Joachim Müssig
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
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Abstract

We studied the Pr2O3/Si(001) interface by a non-destructive depth profiling using synchrotron radiation and photo-electron spectroscopy (SR-PES) at the undulator beam line U49/2-PGM2 and ab initio calculations. Our results provide evidence that a chemical reactive interface exists consisting of a mixed Si-Pr oxide such as (Pr2O3)(SiO)x(SiO2)y. There is no formation of neither an interfacial SiO2 nor interfacial silicide: all Si-Pr bonds are oxidized and all SiO4 units dissolve in the Pr oxide. Under ultrahigh vacuum conditions, silicide formation is observed only when the film is heated above 800°C in vacuum. Interfacial silicates like (Pr2O3)(SiO)x(SiO2)y are promising high-k dielectric materials, e.g., because they represent incremental modification of SiO2 films by Pr ions, so that the interface characteristics can be similar to Si-SiO2 interface properties. The Pr silicate system formed in a natural way at the interface between Si(001) and Pr2O3 offers an increased flexibility towards integration of Pr2O3 into future CMOS technologies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D3.24
Copyright
Copyright © Materials Research Society 2003

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References

Literature

[1] Osten, H. J. et al., IEDM Technical Digest (2000) 653.Google Scholar
[2] Müssig, H.-J., Osten, H.J., Bugiel, E., Dabrowski, J., Fissel, A., Guminskaya, T., Ignatovich, K., Liu, J. P., Zaumseil, P., and Zavodinsky, V., 2001 IEEE/IIRW - Final Report (USA), 1.Google Scholar
[3] Müssig, H.-J., Dabrowski, J., Ignatovich, K., Liu, J. P., Zavodinsky, V., Osten, H. J., Surf. Sci. 504C (2002) 159.Google Scholar
[4] Batchelor, D. R., Follath, R., Schmeißer, D., Nuclear Instruments andMethods in Physics Re-search A 467-468 (2001) 470.Google Scholar
[5] Yeh, J. J. and Lindau, I., Subshell Photo-Ionization Cross Sections, Atomic Data and Nuclear Data Tables, 32 (1985).Google Scholar
[6] Fissel, A., Dabrowski, J., and Osten, H. J., J. Appl. Phys. 91 (2002) 8968.Google Scholar
[7] Schmeiß, D.er, Materials Science in Semiconductor Processing (2003), in print.Google Scholar