Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-27T01:52:28.118Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Ultra-Thin Thermal Silicon Nitride

Published online by Cambridge University Press:  01 February 2011

Katherine M. Buchheit ,
Hideki Takeuchi  and
Tsu-Jae King
Katherine M. Buchheit
Affiliation:
EECS Department, University of California, Berkeley CA 94720–1770
Hideki Takeuchi
Affiliation:
EECS Department, University of California, Berkeley CA 94720–1770
Tsu-Jae King
Affiliation:
EECS Department, University of California, Berkeley CA 94720–1770
Get access

Abstract

Growth behavior and film properties of ultra-thin Si3N4 layers formed by RTN (rapid thermal nitridation) were characterized. The self-limiting growth characteristics of the RTN process are appealing for precise thickness control in the range of 0.5–2.5nm. From SCA (surface charge analysis), the existence of negative fixed charge and electron traps in nitrides was found, in contrast to positive fixed charge and hole traps in oxides, and improvements in interface properties were seen after high temperature annealing. From annealing ambient dependences, the physical origin of the electron traps is likely N-H bonds in the nitride films. AFM (atomic force microscopy) analysis revealed that an atomically flat nitride surface is obtained by post-nitridation spike annealing, but a longer anneal leads to a rougher surface. Effectiveness of ultra-thin nitride barriers against boron penetration from a p+ poly-Si gate was also confirmed by SRA (spreading resistance analysis).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E2.2
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Semiconductor Industry Association, International Technology Roadmap for Semiconductors, 2001 Edition (2001).Google Scholar
[2] Hubbard, K. J. and Schlom, D. G., J. Mat. Res. 11 (11), 2757 (1996).Google Scholar
[3] Harada, Y., Niwa, M., Lee, S., and Kwong, D.-L., Symp. on VLSI Technology Digest, 26, (2002).Google Scholar
[4] Lee, S.J., Luan, H.F., Bai, W.P., Lee, C.H., Jeon, T.S., Senzaki, Y., Roberts, D., Kwong, D.L., International Electron Devices Meeting Technical Digest, 31–34 (2000).Google Scholar
[5] Lu, Q., Lin, R., Takeuchi, H., King, T.-J., Hu, C., Onishi, K., Choi, R., Kang, C.-S., and Lee, J.C., International Reliability Physics Symposium Proc., 377–380 (2002).Google Scholar
[6] Lu, Q., Takeuchi, H., Lin, R., King, T.-J., Hu, C., Onishi, K., Choi, R., Kang, C.-S., and Lee, J.C., Int'l Semiconductor Devices Research Symp. Proc., 429–430 (2001).Google Scholar
[7] She, M., King, T.-J., Hu, C., Zhu, W., Luo, Z., Han, J.-P., Ma, T.-P., IEEE Electron Device Letters 23, 91–93 (2002).Google Scholar
[8] She, M., Takeuchi, H., King, T.-J., IEEE Electron Device Letters 24, 309–311 (2003).Google Scholar
[9] Baumvol, I.J.R., Surface Science Reports 36, 1–166 (1999).Google Scholar
[10] SemiTest SCA-2500 User Manual, December 2000.Google Scholar
[11] Takeuchi, H. and King, T.-J., J. of Electrochem. Soc., to be published (2003).Google Scholar
[12] Plummer, J.D., Deal, M.D., Griffin, P.B., Silicon VLSI Technology: Fundamentals, Practice and Modeling, Prentice Hall, Inc. (2000).Google Scholar
[13] Griscom, D.L., Phy. Rev. B, 40, 4224–4227 (1989).Google Scholar
[14] Hori, T., Iwasaki, H., Naito, Y., Esaki, H., IEEE Trans on Elect. Dev., ED-34(11), 2238 (1987)Google Scholar
[15] Tsai, W., Ragnarsson, L., Chen, P.J., Onsia, B., Carter, R.J., Cartier, F., Young, E., Green, M., Caymax, M., and De Gendt, S., Heyns, H., Symp. on VLSI Tech. Digest, p. 21 (2003).Google Scholar
[16] Onishi, K., Kang, L., Choi, R., Dharmarajan, E., Gopalan, S., Jeon, Y., Kang, C.S., Lee, B.H., Nieh, R., Lee, J.C., Symp. on VLSI Tech. Digest, p. 131 (2001).Google Scholar
[17] Furukawa, A., Teramoto, A., Shimizu, S., Abe, Y., and Tokuda, Y., Symp. on VLSI Tech. Digest, p. 87 (1997).Google Scholar