Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T02:38:31.739Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of the Heteroepitaxial AIN/SiC Interface

Published online by Cambridge University Press:  21 February 2011

M. C. Benjamin ,
C. Wang ,
R. S. Kern ,
R. F. Davis  and
R. J. Nemanich
M. C. Benjamin
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
C. Wang
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
R. S. Kern
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
R. F. Davis
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
R. J. Nemanich
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
Get access

Abstract

This study presents the results of surface investigation of the heteroepitaxial AIN/SiC interface. The analytical tools employed included UPS, XPS, Auger spectroscopy, and LEED. The surface electronic states were characterized by uv photoemission obtained at surface normal. Conclusions drawn from this study are that the AIN/SiC structure results in a negative electron affinity surface which is extremely sensitive to defect density. The surface Fermi level is found to be near the middle of the AlN gap, and a possible band alignment between the AlN and SiC is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 81
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

F. REFERENCES

1 Edgar, J.H., J. Mater. Res., 7, 235 (1992)Google Scholar
2 Kong, H.S., Palmour, J.W., Glass, J.T., and Davis, R.F., Appl. Phys. Lett. 51, 442 (1987)Google Scholar
3 Wang, C., Davis, R.F., Appl. Phys. Lett. 63, 990 (1993).Google Scholar
4 Williams, M.D., Feuer, M.D., Shunk, S.C., Sauer, N.J., and Chang, T.Y., J. Appl. Phys. 71, 3042 (1992).Google Scholar
5 Himpsel, F.J., Knapp, J.A., van Vechten, J.A. and Eastman, D.E., Phys. Rev. B 20, 624 (1979).Google Scholar
6 Pate, B.B., Surf. Sci. 165, 83 (1986).Google Scholar
7 Pate, B.B., Hecht, M.H., Binns, C., Lindau, I. and Spicer, W.E., J. Vac. Sci. Technol. 21, 364 (1982).Google Scholar
8 van der Weide, J. and Nemanich, R.J., J. Vac. Sci. Technol. B 10, 1940 (1992).Google Scholar
9 van der Weide, J. and Nemanich, R.J., Appl. Phys. Lett. 62, 1878 (1993).Google Scholar
10 van der Weide, J. and Nemanich, R.J., Phys. Rev. B (in press).Google Scholar
11 Sitar, Z., Paisley, M.J., Smith, D.K. and Davis, R.F., Rev. Sci. Instrum‥ 61, 2407 (1990).Google Scholar
12 Pelletier, J., Gervais, D., and Pomot, C., J. Appl. Phys. 55, 994 (1983)Google Scholar
13 Lambrecht, Walter R.L. and Segali, Benjamin, Phys. Rev. B 43, 7070 (1991).Google Scholar
14 Rowland, L.B., Kern, R.S., Tanaka, S., and Davis, R.F., in Proceedings of the Fourth International Conference on Amorphous and Crystalline Silicon Carbide, edited by Yang, C.Y., Rahman, M.M., and Harris, G.L. (Springer, Berlin, 1992) p. 84.Google Scholar