Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-23T15:09:25.566Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Hydrogenated Amorphous Silicon-Germanium Alloys Deposited by Dual Target Reactive Magnetron Sputtering

Published online by Cambridge University Press:  07 June 2012

Samuel J. Levang  and
James R. Doyle
Samuel J. Levang
Affiliation:
Department of Physics and Astronomy, Macalester College, St. Paul, MN 55105 U.S.A.
James R. Doyle
Affiliation:
Department of Physics and Astronomy, Macalester College, St. Paul, MN 55105 U.S.A.
Get access

Abstract

Hydrogenated amorphous silicon-germanium alloy thin films (a-Si1-xGex:H) were deposited using reactive magnetron sputtering. Dual targets of silicon and germanium were sputtered in an argon + hydrogen atmosphere using rf excitation. Films with x = 0.4 were deposited as a function of substrate temperature and hydrogen partial pressure, and were evaluated by dark and photoconductivity, infrared absorption, and optical transmission. Photosensitivity reached a maximum value of about 5000 between 150 and 200 °C. Using the stretching modes in the region of 2000 cm-1, the hydrogen bonding was characterized in terms of the preferential attachment ratio (PA), which represents the ratio of H bonded to silicon to that bonded to germanium. The PA shows a systematic increase with increasing temperature, independent of hydrogen partial pressure. The interplay between thermodynamic and kinetics effects in determining PA and film quality will be discussed.

Keywords

amorphoussputteringSi
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2012 , 2012 , pp. 301 - 306
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Yang, J., Banerjee, A., and Guha, S., Appl. Phys. Lett. 70 2975 (1997).CrossRefGoogle Scholar
Terakawa, A. and Matsunami, H., Jpn. J. Appl. Phys. 38, 6207 (1999).CrossRefGoogle Scholar
Mahan, A. H., Xu, Y., Gedvilas, L.M., and Williamson, D. L., Thin Solid Films 517, 3532 (2009).CrossRefGoogle Scholar
Rudder, R. A., Cook, J. W. Jr., and Lucovsky, G., Appl. Phys, Lett. 45, 887, (1984).CrossRefGoogle Scholar
Swaenpoel, R., J. Phys. E: Sci. Instrum. 16, 1214 (1983).CrossRefGoogle Scholar
Cardona, M., Phys. Status Solidi B 118 463 (1983).CrossRefGoogle Scholar
Bouizem, Y., Belfedal, A., Seb, J. D., Kebab, A., and Chahed, L., J. Phys.: Condens. Matter 19, 356215 (2007).Google Scholar
Paul, W., Paul, D. K., von Roedern, B., Blake, J., and Qguz, S., Phys. Rev. Lett. 46, 1016 (1981).CrossRefGoogle Scholar
Mackenzie, K. D., Eggert, J. R., Leopold, D. J., Li, Y. M., Lin, S., and Paul, William, Phys. Rev B. 31, 2198 (1985).CrossRefGoogle Scholar
Nelson, B. P., Xu, Y., Williamson, D.L., von Roedern, B., Mason, A., Heck, S., Mahan, A. H., Schmitt, S.E., Gallagher, A.C., Webb, J., and Reedy, R., Mat. Res. Soc. Symp. Proc . vol. 507, MRS, Pittsburgh, PA, (1998) p. 447.Google Scholar
Wickboldt, P., Pang, D., Paul, W., Chen, J. H., Zhong, F., Chen, C., Cohen, J. D., and Williamson, D. L., J. Appl. Phys. 81, 6252 (1997). PECVDCrossRefGoogle Scholar
Kittel, C. and Kroemer, H., Thermal Physics, W.H. Freeman and Comnpany, San Francisco, 1980) p. 61.Google Scholar
Berkowitz, J., Ellison, G. B. and Gutman, D. J. Phys. Chem. 98, 2744 (1994).CrossRefGoogle Scholar