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Process and Equipment Issues in Rapid Thermal Oxidation (RTO)

Published online by Cambridge University Press:  28 February 2011

Sandeep Mehta Sandeep Mehta  and
David Hodul David Hodul
Sandeep Mehta Sandeep Mehta
Affiliation:
Varian Associates, Inc., Extrion Division, Dory Road, Gloucester, MA 01930
David Hodul David Hodul
Affiliation:
Varian Research Center, 611 Hansen Way, Palo Alto, CA 94303
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Abstract

Thin oxides with thicknesses in the range of 150 to 300Å were grown on lOO-mm <100> Si wafers in a commercial RTP reactor. Growth temperatures and times were llO0-1200°C for 60-180 seconds in 100% 02 at 1 atmosphere. Oxide thickness uniformity was measured using ellipsometry; contour maps of thickness uniformity will be presented. The standard deviation wascalculated to be 2-2.5% within 5 mm of the edge using a method which weights the area represented by each of 45 data points per wafer. In order to correct for dynamic changes in temperature uniformity, a new annealing method was developed.Results on wafer-to-wafer uniformity will be presented. Improvements achieved by post-oxidation annealing in N2 and electrical uniformity of films will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 95
Copyright
Copyright © Materials Research Society 1987

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References

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