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Principles and Applications of Metalorganic Chemical Vapor Deposition for the Growth of ih-V Compounds on Si Substrates

Published online by Cambridge University Press:  28 February 2011

Russell D. Dupuis
Russell D. Dupuis*
Affiliation:
At&t Bell Laboratories, Murray Hill, New Jersey 07974–2070
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Abstract

The use of the metalorganic chemical vapor deposition thin film materials technology in the heteroepitaxial growth of GaAs on Si substrates is of increasing interest for a wide variety of applications. This paper will describe the principles and applications of this materials technology and discuss possible future approaches to the growth of high-quality HI-V heteroepitaxial layers on Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 15
Copyright
Copyright © Materials Research Society 1988

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