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Pre-Gate Oxidation Cleaning of Silicon Wafer by Electric Arc Plasma Jet Treatment
Published online by Cambridge University Press: 15 February 2011
Abstract
The effect of arc plasma jet treatment (APJT) of silicon surface used for pre-gate oxidation cleaning on the electrophysical parameters of MOS structures (Si/SiO2/Si*/Al) has been studied- We show that APJT etching cleaning considerably improves the constant current charge to breakdown of MOS structures in comparison with conventional wet chemical cleaning. We have analyzed the effect of plasma cleaning conditions on the quality of gate oxide and SiO2/Si interface.
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- Copyright © Materials Research Society 1995