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Post-etch treatment enabled electroless copper metallization of porous dielectric

Published online by Cambridge University Press:  29 May 2013

Yezdi N. Dordi*
Affiliation:
Lam Research Corp., 4400 Cushing Parkway Fremont, CA 94538, U.S.A.
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Abstract

This paper describes an alternate two-step metallization scheme for porous dielectrics. The patterned dielectric surface is first treated in a plasma etch chamber where the dielectric surface is coated with a very thin carbon-based film. This is followed by electroless copper deposition. The plasma post-etch treatment (PET) film seals the pores of the dielectric, minimizes dielectric damage, and functionalizes the dielectric to enable electroless plating.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

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References

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