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Photoemission Study of the Si, Ge Epitaxial Growth Process Using Surfactants

Published online by Cambridge University Press:  25 February 2011

Xiaoyu Yang ,
Renyu Cao ,
Jeff Terry  and
Piero Pianetia
Xiaoyu Yang
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, CA94309
Renyu Cao
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, CA94309
Jeff Terry
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, CA94309
Piero Pianetia
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, CA94309
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Abstract

Heteroepitaxial growth of Ge on Si(100) and Si on Ge(100) surfaces with Sb as a surfactant has been investigated by in situ high resolution photoemission and low energy electron diffraction (LEED). Our results show that an ordered monolayer of Sb atoms saturate the surface dangling bonds and consequently lower the surface free energy. Deposition of Ge or Si on the Sb/Si(100) or Sb/Ge(100) surfaces either at room temperature, followed by mild annealing or deposition at elevated temperature, result in an epitaxial layer of Ge or Si on the substrate, respectively. We provide clear experimental evidence that the deposited Ge or Si atoms changes position with the surface Sb atoms in this process. Ge or Si atoms occupy the epitaxial sites previously occupied by the Sb atoms. The Sb atoms in turn segregate to the surface and form a new ordered layer. The Bi-assisted growth process is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 455
Copyright
Copyright © Materials Research Society 1992

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References

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