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Oxide-Semiconductor Interface Characterization Using Kelvin Probe-AFM In Combination With Corona-Charge Deposition

Published online by Cambridge University Press:  01 February 2011

Bert Lägel ,
Maria D. Ayala ,
Elena Oborina  and
Rudy Schlaf
Bert Lägel
Affiliation:
Department of Electrical Engineering, University of South Florida, Tampa, Fl 33620
Maria D. Ayala
Affiliation:
Department of Electrical Engineering, University of South Florida, Tampa, Fl 33620
Elena Oborina
Affiliation:
Department of Electrical Engineering, University of South Florida, Tampa, Fl 33620
Rudy Schlaf*
Affiliation:
Department of Electrical Engineering, University of South Florida, Tampa, Fl 33620
*
** email: [email protected]
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Abstract

Corona charge deposition methods in combination with spatially resolved surface potential measurements have become a standard tool for Si oxide quality monitoring. Based on this technique oxide-semiconductor interface parameters such as surface barrier height, oxide thickness and oxide charge density can now be monitored in-line with commercially available devices. The ongoing downscaling of integrated circuits into the sub-100 nm regime makes the development of high resolution oxide screening methods increasingly important.

However, currently available commercial devices are limited in their spatial resolution since they employ the traditional vibrating Kelvin probe technique, restricting their lateral resolution to several μm. In order to increase the lateral resolution of this measurement method we have combined the corona-charge deposition technique with Kelvin Probe AFM. We present initial results of this novel measurement technique and demonstrate its feasibility by measurements on lithographically prepared oxide patterns on Si wafers with different oxide thicknesses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E3.2
Copyright
Copyright © Materials Research Society 2004

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Footnotes

*

Undergraduate Research Associate

References

REFERENCES

1. Schroder, D. K., Measurement Science & Technology 12 (3), R16 (2001).Google Scholar
2. Kronik, L. and Shapira, Y., Surface Science Reports 37 (1–5), 1 (1999).Google Scholar
3. http://public.itrs.net (November 2003).Google Scholar
4. Wilson, M., Lagowski, J., Jastrezbski, L. et al., presented at the 2000 International Conference on Characterization and Metrology for ULSI Technology NIST, Gaithersburg, Maryland, USA, 2000.Google Scholar
5. Wilson, M., Lagowski, J., Savtchouk, A. et al., presented at the ASTM STP 1382, West Conshohocken, PA, 1999.Google Scholar
6. Lagel, B., Baikie, I. D., and Petermann, U., Surface Science 435, 622 (1999).Google Scholar
7. Miller, T.G., in Semiconductor International (1995), Vol. 18, pp. 147.Google Scholar
8. Schroder, D. K., Materials Science and Engineering B-Solid State Materials for Advanced Technology 91, 196 (2002).Google Scholar
9. Inc. Semiconductor Diagnostics, 3650 Spectrum Blvd., Suite 130, Tampa, FL 33612.Google Scholar
10. http://www.veeco.com (November 2003).Google Scholar
11. Nonnenmacher, M., Oboyle, M. P., and Wickramasinghe, H. K., Applied Physics Letters 58 (25), 2921 (1991).Google Scholar
12. Kalinin, Sergei V. and Bonnell, Dawn A., in Scanning Probe Microscopy and Spectroscopy, 2nd ed, edited by Bonnell, Dawn A. (John Wiley & Sons, Inc., New York, 2001), pp. 211–217.Google Scholar
13. Schroeder, P. G., Nelson, M. W., Parkinson, B. A. et al., Surface Science 459 (3), 349 (2000).Google Scholar