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Oxide-nitride-oxide Dielectric Stacks with Embedded Si-nanoparticles Fabricated by Low-energy Ion-beam-synthesis

Published online by Cambridge University Press:  01 February 2011

Vassilis Ioannou-Sougleridis ,
Panagiotis Dimitrakis ,
Vassilios Em. Vamvakas ,
Pascal Normand ,
Caroline Bonafos ,
Sylvie Schamm  and
Gerard Ben Assayag
Vassilis Ioannou-Sougleridis
Affiliation:
[email protected], National Center for Scientific Research 'Demokritos', Institute of Microelectronics, Patriarchou Gregoriou Street, P.O. Box 60228, Aghia Paraskevi, Attika, 153-10, Greece, ++30-210-650-3112
Panagiotis Dimitrakis
Affiliation:
[email protected], NCSR 'Demokritos', Institute of Microelectronics, Patriarchou Gregoriou Street, P.O. Box 60228, Aghia Paraskevi, Attika, 153-10, Greece
Vassilios Em. Vamvakas
Affiliation:
[email protected], NCSR 'Demokritos', Institute of Microelectronics, Patriarchou Gregoriou Street, P.O. Box 60228, Aghia Paraskevi, Attika, 153-10, Greece
Pascal Normand
Affiliation:
[email protected], NCSR 'Demokritos', Institute of Microelectronics, Patriarchou Gregoriou Street, P.O. Box 60228, Aghia Paraskevi, Attika, 153-10, Greece
Caroline Bonafos
Affiliation:
[email protected], CNRS, CEMES, 29 rue J. Marvig, Toulouse, 31055 Toulouse, France
Sylvie Schamm
Affiliation:
[email protected], CNRS, CEMES, 29 rue J. Marvig, Toulouse, 31055 Toulouse, France
Gerard Ben Assayag
Affiliation:
[email protected], CNRS, CEMES, 29 rue J. Marvig, Toulouse, 31055 Toulouse, France
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Abstract

This work reports on the formation of Si-nanocrystals within silicon nitride layers by low-energy Si ion implantation. Electrical characterization of oxide/Si-nanocrystal-nitride/oxide dielectric stacks demonstrates regions of negative differential resistance at low-fields. In addition, the memory characteristics in terms of charge trapping, write/erase response and retention properties of the dielectric stacks were recorded. The results indicate the large potential of the low-energy ion beam synthesis method in nitride memory technology.

Keywords

ion-implantationmemorynitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I03-10
Copyright
Copyright © Materials Research Society 2007

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References

1. Assayag, G. Ben, Bonafos, C., Carrada, M., Claverie, A., Normand, P., Tsoukalas, D., Appl. Phys. Lett. 82, 200–202 (2003)Google Scholar
2. Bonafos, C., Carrada, M., Cherkashin, N., Coffin, H., Chassaing, D., Assayag, G. Ben, Claverie, A., Müller, T., Heinig, K. H, Perego, M., Fanciulli, M., Dimitrakis, P., and Normand, P., J. Appl. Phys. 95, 5696–5702 (2004)Google Scholar
3. Ioannou-Sougleridis, V., Dimitrakis, P., Vamvakas, V., Normand, P., Bonafos, C., Schamm, S., Mouti, A., Assayag, G. Ben and Paillard, V., Nanotechnology, 18, 215204, (2007).Google Scholar