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Outplating of Metallic Contaminants on Silicon Wafers From Diluted Acid Solutions

Published online by Cambridge University Press:  15 February 2011

A. L. P. Rotondaro ,
T. Q. Hurd ,
H. F. Schmidt ,
I. Teerlinck ,
M. M. Heyns  and
C. Claeys
A. L. P. Rotondaro
Affiliation:
IMEC, Kapeldreef 75, Leuven B-3001, Belgium
T. Q. Hurd
Affiliation:
assigned to IMEC from Texas Instruments, Dallas TX, USA
H. F. Schmidt
Affiliation:
IMEC, Kapeldreef 75, Leuven B-3001, Belgium
I. Teerlinck
Affiliation:
IMEC, Kapeldreef 75, Leuven B-3001, Belgium
M. M. Heyns
Affiliation:
IMEC, Kapeldreef 75, Leuven B-3001, Belgium
C. Claeys
Affiliation:
IMEC, Kapeldreef 75, Leuven B-3001, Belgium
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Abstract

The outplating behaviour of Fe and Cu was investigated for diluted solutions of HCl and HNO3. The deposition of the metallic contaminants was found to be strongly dependent on the type of surface that is exposed to the contaminated solution. Cu deposits heavily on bare silicon surfaces, whereas only low levels of Fe deposition are observed. On the other hand, on thermal oxide surfaces, the levels of deposited Fe are consistently higher than the Cu ones. The acid used appears to have no major impact on the deposition process. The pH of the solutions has a major effect on the Cu deposition and a minor effect on the Fe case.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 183
Copyright
Copyright © Materials Research Society 1995

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References

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