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Oriented Si nanowires grown via an SLS mechanism

Published online by Cambridge University Press:  21 February 2011

Y. J. Xing ,
Z. H. Xi ,
Q. L. Hang ,
H. F. Yan ,
S. Q. Feng ,
J. Xu ,
H.Z. Zhang  and
D. P. Yu
Y. J. Xing
Affiliation:
Department of Electronics, Peking University, Beijing, China Department of Physics, State Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing, China
Z. H. Xi
Affiliation:
Department of Electronics, Peking University, Beijing, China
Q. L. Hang
Affiliation:
Department of Physics, State Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing, China
H. F. Yan
Affiliation:
Department of Physics, State Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing, China
S. Q. Feng
Affiliation:
Department of Physics, State Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing, China
J. Xu
Affiliation:
Department of Physics, State Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing, China
H.Z. Zhang
Affiliation:
Department of Physics, State Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing, China
D. P. Yu
Affiliation:
Department of Physics, State Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing, China, [email protected]
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Abstract

Highly oriented silicon nanowires were grown on Si (111) substrate via a solid-liquid-solid (SLS) mechanism. Unlike the well known vapor-liquid-solid (VLS) mechanism of whisker growth, no gaseous or liquid Si source was supplied during growth. Ni was used as the liquid forming agent and mixture of H2 and Ar was introduced in the experiment. Oriented silicon nanowires grew at 950°C and the ambient pressure kept at about 200 Torr. The oriented silicon nanowires have a length around I il m and uniform diameter about 25nm. Selected area electron diffraction showed that silicon nanowires are completely amorphous. The approach used here is simple and controllable, and may be useful in large-scale synthesis of various nanowires.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 581: Symposium F – Nanophase & Nanocomposite Materials II , 1999 , 231
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Iijima, S., Nature 354.56(1991)Google Scholar
2. Yu, D. P., Lee, C. S., Bello, I., Sun, X. S., Tang, Y. H., Zhou, G. W., Bai, Z. G., Zhang, Z. and Feng, S. Q., Solid State Communications 105, 403 (1998).Google Scholar
3. Yu, D.P., Bai, Z.G., Ding, Y., Hang, Q. L., Zhang, H.Z., Wang, J.J., Zou, Y.H., Qian, W., Xiong, G.C. and Feng, S.Q., Applied Physics Letters 72,3458(1998)Google Scholar
4. Zhang, H.Z., Yu, D.P., Ding, Y., Bai, Z.G., Hang, Q. L. and Feng, S.Q., Applied Physics Letters 73,3396(1998)Google Scholar
5. Yu, D.P., Bai, Z.G., Wang, J.J., Zou, Y.H., Qian, W., Fu, J.S., Zhang, H.Z., Ding, Y., Xiong, G.C. and Feng, S.Q. Physical Review B 59, 2498 (1999).Google Scholar
6. Hu, J., Ouyang, M., Yang, P., Lieber, C.M., Nature 399,48(1999)Google Scholar
7. Westwater, J., Gosain, D. P., Tomiya, S., Usui, S., Ruda, H., J. Vac. Sci. Technol.. B 15, 554 (1997)Google Scholar
8. Wager, R.S. and Ellis, W.C., Appl.Phys.Letter. 4.P.89(1964).Google Scholar
9. Yan, H. F., Xing, Y. J., Hang, Q. L., Yu, D. P., Zhang, P., Xu, J., Xi, Z. H., Feng, S. Q.. Controlled growth of amorphous silicon nanowires via a solid-liquid-solid (SLS), submitted to Applied Physics Letters (1999).Google Scholar