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Optical Properties of Ordered Ge-Si Atomic-Layer Superlattices

Published online by Cambridge University Press:  28 February 2011

T. P. Pearsall ,
J. Bevk ,
J. C. Bean ,
J. M. Bonar  and
J. P. Mannaerts
T. P. Pearsall
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. Bevk
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. C. Bean
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. M. Bonar
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. P. Mannaerts
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

A systematic study of the band-to-band optical transitions in commensurate strainedlayer superlattices of Ge and Si grown on (001) Si substrates show the presence of new electronic energy bands. Our measurements suggest that superlattice structure on the same scale as the unit cell results in a band structure significantly different from that of a random alloy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 287
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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