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Centro de Investigación y de Estudios Avanzados del IPN, Electrical Engineering Department, Av. IPN No. 2508, 07360 México, D. F. e-mail: [email protected]
G. Francisco Pérez-Sánchez
Affiliation:
Centro de Investigación y de Estudios Avanzados del IPN, Electrical Engineering Department, Av. IPN No. 2508, 07360 México, D. F. e-mail: [email protected]
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References
REFERENCES
[1]
[1]Pomp, H. G., Kuiper, A. E. T.Lifka, H., Montree, A. H. and Woerle, P. H., Microelectronics Eng. Vol. 22 (1993), 85.Google Scholar
[2]
[2]Ahn, J., Ting, W. and Kwong, Dim-Lee, IEEE Electron. Dev. Lett. Vol. 13 (1992), 117.Google Scholar
[3]
[3]Buchanan, D.A., IBM J. Res. Develop. Vol. 43, No. 3 (1999), 245Google Scholar
[4]
[4]Matsuoka, T., Taguchi, S., Ohtsuka, H., Taniguchi, K.Hamaguchi, C., Kakimoto, S. and Uda, K., IEEE Trans. Electron Dev. ED-43 (1996), 1364.Google Scholar
[5]
[5]Okada, Y., and Tobin, P. J., Lakhotia, Vickas, Ajuria, Sergio A., and Hedge, Rama I., J. Electrochem. Soc. Vol. 140, No. 6 (1993), L 87.Google Scholar
[6]
[6]Ganem, J., Rigo, S., Trimaille, I., Baumvol, I. R. J., Stedile, F. C., Appl. Phys. Lett. Vol. 68 (1996), 2366.Google Scholar
[7]
[7]Saks, N. S. and Ma, D. I., Appl. Phys. Lett. Vol. 67, No. 3 (1995), 374.Google Scholar
[8]
[8]Deal, B. E. and Grove, A. S., J. Appl. Phys. Vol. 36, No. 12 (1965), 3770.Google Scholar