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Nucleation and Step Dynamics in SIC Epitaxial Growth

Published online by Cambridge University Press:  21 February 2011

Hiroyuki Atsunami  and
Tsunenobu Kimoto
Hiroyuki Atsunami
Affiliation:
Department of Electrical Engineering, Kyoto University Yoshidahonraachi, Sakyo, Kyoto 606–01, Japan
Tsunenobu Kimoto
Affiliation:
Department of Electrical Engineering, Kyoto University Yoshidahonraachi, Sakyo, Kyoto 606–01, Japan
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Abstract

Recent progress in horaoepitaxial growth of 6H-SiC by stop-controlled epitaxy utilizing off-angle substrates is discussed in detail. Features of step-controlled epitaxy and its growth mechanism are described based on experimental results. The growth mode on off-angle substrates is explained by a stagnant layer model. The diffusion length of adatoms on a surface is calculated using a simple surface diffusion model. The critical conditions of two-dimensional nucleation and step-flow growth are predicted based on theoretical calculation and experimental results. Microscopic surface processes such as nucleation and step motion are made clear by observing the grown layer after short-time growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 369
Copyright
Copyright © Materials Research Society 1994

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References

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